High power multilayer module having low inductance and fast switching for paralleling power devices

ABSTRACT

The disclosure is directed to a power module that includes at least one power substrate, a housing arranged on the at least one power substrate, and a first terminal electrically connected to the at least one power substrate. The first terminal includes a contact surface located above the housing at a first elevation. The power module includes a second terminal including a contact surface located above the housing at a second elevation different from the first elevation, a third terminal electrically connected to the at least one power substrate, and a plurality of power devices electrically connected to the at least one power substrate.

CROSS REFERENCE TO PRIOR APPLICATIONS

This application is a continuation in part of U.S. patent applicationSer. No. 15/405,520, filed Jan. 13, 2017, which is hereby incorporatedby reference in its entirety for all purposes as if fully set forthherein. This application also claims the benefit of U.S. ProvisionalApplication No. 62/790,965 filed on Jan. 10, 2019, which is herebyincorporated by reference in its entirety for all purposes as if fullyset forth herein.

BACKGROUND OF THE DISCLOSURE 1. Field of the Disclosure

This disclosure is directed to a high power multilayer module having lowinductance and fast switching for paralleling power devices. Moreover,the disclosure is directed to a process of configuring a high powermultilayer module having low inductance and fast switching forparalleling power devices.

2. Related Art

As will be appreciated by those skilled in the art, power modules areknown in various forms. Power modules provide a physical containment forpower components, usually power semiconductor devices. These powersemiconductors are typically soldered or sintered on a power electronicsubstrate. The power module typically carries the power semiconductors,provides electrical and thermal contact, and includes electricalinsulation.

Parasitic impedances in the power module, however, limit the practicalimplementation of these devices in current technologies. Specifically,the loop inductance during switching events can result in a voltageovershoot and ringing. This reduces stability, increases switchinglosses, creates Electromagnetic Interference (EMI), and stresses systemcomponents. Ultimately, these factors may limit the maximum switchingfrequency, which is desirable to reduce the size of external filters ina power conversion system.

Accordingly, what is needed is a power module configured to addressparasitic impedances, such as loop inductance, to increase stability,decrease switching losses, reduce EMI, and/or limit stresses on systemcomponents.

SUMMARY OF THE DISCLOSURE

According to an aspect of the disclosure a power module includes atleast one power substrate, a housing arranged on the at least one powersubstrate, a first terminal electrically connected to the at least onepower substrate, the first terminal comprising a contact surface locatedabove the housing at a first elevation, a second terminal comprising acontact surface located above the housing at a second elevationdifferent from the first elevation, a third terminal electricallyconnected to the at least one power substrate, and a plurality of powerdevices electrically connected to the at least one power substrate.

According to an aspect of the disclosure a system that includes a powermodule includes at least one power substrate, a housing arranged on theat least one power substrate, a first terminal electrically connected tothe at least one power substrate, the first terminal comprising acontact surface located above the housing, a second terminal comprisinga contact surface located above the housing, a third terminalelectrically connected to the at least one power substrate, a pluralityof power devices electrically connected to the at least one powersubstrate, a first planar buss bar electrically connected to the firstterminal, and a second planar buss bar electrically connected to thesecond terminal, where the first planar buss bar and the second planarbuss bar are arranged one above the other.

According to an aspect of the disclosure a power module includes atleast one power substrate, a housing arranged on the at least one powersubstrate, a first terminal electrically connected to the at least onepower substrate, the first terminal comprising a contact surface locatedabove the housing, a second terminal comprising a contact surfacelocated above the housing, a third terminal electrically connected tothe at least one power substrate, and a plurality of power deviceselectrically connected to the at least one power substrate, wherecurrent flows in a first direction from the first terminal across the atleast one power substrate, and wherein the current flows in a seconddirection from the at least one power substrate to the second terminalto reduce impedance.

According to an aspect of the disclosure a process of configuring apower module includes providing at least one power substrate, providinga housing on the at least one power substrate, connecting a firstterminal electrically to the at least one power substrate, providing thefirst terminal with a contact surface located above the housing at afirst elevation, providing a second terminal comprising a contactsurface located above the housing at a second elevation different fromthe first elevation, providing a third terminal electrically connectedto the at least one power substrate, and providing a plurality of powerdevices electrically connected to the at least one power substrate.

Additional features, advantages, and aspects of the disclosure may beset forth or apparent from consideration of the following detaileddescription, drawings, and claims. Moreover, it is to be understood thatboth the foregoing summary of the disclosure and the following detaileddescription are exemplary and intended to provide further explanationwithout limiting the scope of the disclosure as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the disclosure, are incorporated in and constitute apart of this specification, illustrate aspects of the disclosure andtogether with the detailed description serve to explain the principlesof the disclosure. No attempt is made to show structural details of thedisclosure in more detail than may be necessary for a fundamentalunderstanding of the disclosure and the various ways in which it may bepracticed. In the drawings:

FIG. 1A schematically illustrates a half-bridge based topology of apower module according to aspects of the disclosure.

FIG. 1B illustrates a current loop between the DC link capacitors andswitch positions inside of the power module of FIG. 1A.

FIG. 2 illustrates various interconnections and associated impedancesaccording to aspects of the disclosure.

FIG. 3 illustrates various interconnections and associated impedances ofa switch position according to aspects of the disclosure.

FIG. 4A illustrates a perspective schematic view of a power moduleaccording to an aspect of the disclosure.

FIG. 4B illustrates a top schematic view of a power module according toan aspect of the disclosure.

FIG. 5 illustrates a plurality of single phase modules in a paralleledconfiguration according to aspects of the disclosure.

FIG. 6A illustrates a first power module configuration according toaspects of the disclosure.

FIG. 6B illustrates a second power module configuration according toaspects of the disclosure.

FIG. 7 illustrates a plurality of power modules in a full bridgeconfiguration according to aspects of the disclosure.

FIG. 8 illustrates a plurality of power modules in a three-phaseconfiguration according to aspects of the disclosure.

FIG. 9 illustrates a single power module having a full bridgeconfiguration according to aspects of the disclosure.

FIG. 10 illustrates an exploded view of the power module according toaspects of the disclosure.

FIG. 11 illustrates a partial view of the power module of FIG. 10.

FIG. 12A illustrates a top view of the phase leg of the power moduleconstructed according to the disclosure, with each node identified in ahalf-bridge topology.

FIG. 12B illustrates a schematic of the phase leg of the power moduleconstructed according to the disclosure, with each node identified in ahalf-bridge topology according to FIG. 12A.

FIG. 13 illustrates a cross section view of the phase leg of FIG. 12Aand FIG. 12B.

FIG. 14 illustrates a cross section view of the phase leg of FIG. 12Aand FIG. 12B that includes a current path.

FIG. 15 illustrates contact surfaces of the power module together withbussing according to an aspect of the disclosure.

FIGS. 16A, 16B, and 16C illustrate various aspects of a terminal of thepower module according to aspects of the disclosure.

FIG. 17 schematically illustrates a plurality of devices in parallelaccording to aspects of the disclosure.

FIG. 18 illustrates a perspective view of the effective gate switchingloop according to an aspect of the disclosure.

FIG. 19 illustrates a top view of the effective gate switching loopaccording to an aspect of the disclosure.

FIG. 20 illustrates a partial exemplary implementation that includes apower module according to aspects of the disclosure.

FIG. 21 illustrates an exemplary laminated buss bar according to thedisclosure.

FIG. 22 illustrates one portion of the exemplary laminated buss baraccording to FIG. 21.

FIG. 23 illustrates another portion of the exemplary laminated buss baraccording to FIG. 21.

FIG. 24 illustrates a phase output buss bar according to the disclosure.

FIG. 25 illustrates a perspective view an exemplary implementation thatincludes a power module and laminated buss bar according to aspects ofthe disclosure.

FIG. 26 illustrates a first cross-sectional view of an exemplaryimplementation that includes a power module and laminated buss baraccording to FIG. 25.

FIG. 27 illustrates a second cross-sectional view of an exemplaryimplementation that includes a power module and laminated buss baraccording to FIG. 25.

FIG. 28 and FIG. 29 illustrate an exemplary single module gate driveraccording to the disclosure.

FIG. 30 illustrates a current sensing component according to aspects ofthe disclosure.

FIG. 31 illustrates a current sensing component arranged with phaseoutput buss bars according to FIG. 30.

FIG. 32 illustrates an exemplary three phase motor drive power accordingto an aspect of the disclosure.

FIG. 33 schematically illustrates a plurality of power devices inparallel according to aspects of the disclosure.

FIG. 34 illustrates a top view of the effective gate switching loop anda power module according to an aspect of the disclosure.

FIG. 35 illustrates a perspective view of a configuration that includespower modules and a housing in accordance with an aspect of thedisclosure.

FIG. 36 illustrates a side view of the configuration of FIG. 35.

FIG. 37 illustrates a partial perspective view of the configuration ofFIG. 35.

FIG. 38 illustrates another partial perspective view of theconfiguration of FIG. 35.

FIG. 39 illustrates another partial perspective view of theconfiguration of FIG. 35.

FIG. 40 illustrates another partial perspective view of theconfiguration of FIG. 35.

FIG. 41 illustrates another partial perspective view of theconfiguration of FIG. 35.

FIG. 42 illustrates a process of implementing and operating aconfiguration that includes a power module.

DETAILED DESCRIPTION OF THE DISCLOSURE

The aspects of the disclosure and the various features and advantageousdetails thereof are explained more fully with reference to thenon-limiting aspects and examples that are described and/or illustratedin the accompanying drawings and detailed in the following description.It should be noted that the features illustrated in the drawings are notnecessarily drawn to scale, and features of one aspect may be employedwith other aspects as the skilled artisan would recognize, even if notexplicitly stated herein. Descriptions of well-known components andprocessing techniques may be omitted so as to not unnecessarily obscurethe aspects of the disclosure. The examples used herein are intendedmerely to facilitate an understanding of ways in which the disclosuremay be practiced and to further enable those of skill in the art topractice the aspects of the disclosure. Accordingly, the examples andaspects herein should not be construed as limiting the scope of thedisclosure, which is defined solely by the appended claims andapplicable law. Moreover, it is noted that like reference numeralsrepresent similar parts throughout the several views of the drawings.

This disclosure describes a power module that may include structureoptimized for state-of-the-art wide band gap power semiconductor devicessuch as Gallium Nitride (GaN), Silicon Carbide (SiC), and the like,which are capable of carrying high amounts of currents and voltages andswitching at increasingly faster speeds in comparison with establishedtechnologies. Conventional power electronic packages are limited intheir functionality for these semiconductors, having internal layoutsintended for silicon (Si) device technologies.

The disclosed power module may be configured to evenly distributecurrent between large arrays of paralleled devices with a significantlylower loop inductance than standard packaging approaches. A multi-levelcurrent path with terraced power terminals simplify an externalconnection with a bussing system, reducing inductance between the powermodule and filtering capacitors. The layout of the power module ishighly configurable and may be configured to adopt most power circuittopologies common in the power electronics industry.

The disclosed power module makes significant improvements to theinternal module performance, system level implementation,manufacturability, and ease of use through the addition of a tighterpower loop and logical external terminal placement.

In this regard, the disclosed power module may be configured to provideat least one or more of the following:

-   -   Highly optimized low inductance power module structure.    -   Modular, scalable, and flexible layout and power flow.    -   Equalized paralleling of many power semiconductors to form a        high current switch position.    -   Optimized gate and sense signal structure for paralleling of        many power semiconductors.    -   Sense connectors for temperature sensing and over current        protection.    -   Form factor suitable for high voltage operation up to about        1700V or more.    -   Scalable height to exceed 1700V operation.    -   Multi-layer internal conductor layout for optimized external        system interconnection.    -   Modular internal structure designed to accommodate a variety of        state-of-the-art materials, attaches, isolation and        interconnection techniques.    -   Heavily optimized for high performance system level integration.    -   Easy to parallel, facilitating a direct scale up to higher        currents.    -   Configurable in a wide variety of power topologies, including        half-bridge, full-bridge, three phase, booster, chopper, and        like arrangements.    -   Scalable system implementation to meet a variety of power        processing needs.

In essence, the disclosed power module configuration may allow for fullutilization of the capabilities of advanced power semiconductors,providing significant improvements to power density, switching,efficiency, and the like.

The power devices of the power module range in structure and purpose.The term ‘power device’ refers to various forms of transistors anddiodes designed for high voltages and currents. The transistors may becontrollable switches allowing for unidirectional or bidirectionalcurrent flow (depending on device type) while the diodes may allow forcurrent flow in one direction and may not controllable. The transistortypes may include but are not limited to Metal Oxide Field EffectTransistor (MOSFET), a Junction Field Effect Transistor (JFET), BipolarJunction Transistor (BJT), Insulated Gate Bipolar Transistor (IGBT), andthe like.

The power devices may include Wide Band Gap (WBG) semiconductors,including Gallium Nitride (GaN), Silicon Carbide (SiC), and the like,and offer numerous advantages over conventional Silicon (Si) as amaterial for the power devices. Nevertheless, various aspects of thedisclosure may utilize Si type power devices and achieve a number of thebenefits described herein. The key metrics of the WBG semiconductors mayinclude one or more of the following non-limiting aspects:

-   -   Higher voltage blocking.    -   Higher current density.    -   Higher temperature operation.    -   Faster switching.    -   Improved thermal performance.    -   Lower on-resistance (reduced conduction losses).

Lower turn-on and turn-off energies (reduced switching losses). Itshould be appreciated that these above-noted key metrics of the WBGsemiconductors are not required and may not be the implemented in someaspects of the disclosure.

To effectively utilize the WBG semiconductor devices, a power module(also referred to as a power package) is employed. The power module mayserve a number of functions including one or more of the followingnon-limiting aspects:

-   -   Provides electrical interconnection of power semiconductor        devices into useful topologies.    -   Protects the sensitive devices from moisture, vibration,        contamination, and the like    -   Produces an effective and efficient means for the removal of        waste heat generated from the devices as a result of conduction        and switching losses.    -   Facilitates system level implementation with robust power and        signal electrical connections to the internal layout. The power        and signal electrical connections may be bolt-on, crimp-on,        solder, plug and receptacle, and the like implementations.    -   Provides voltage safety with internal dielectric encapsulation        and external voltage creepage and clearance distances according        to industry adopted standards.

It should be appreciated that these above-noted functions are notrequired and may not be the implemented in some aspects of thedisclosure.

FIG. 1A schematically illustrates a half-bridge based topology of apower module according to aspects of the disclosure. A half-bridge basedtopology is a fundamental building block in many switching powerconverters. For motor drives, inverters, and DC-DC converters, thesetopologies are typically connected to a DC supply 112, with a bank of DClink capacitors 102 as an intermediate connection between them. This ispresented schematically in FIG. 1A. The DC link capacitors 102 may actto filter ripple on the line and counter the effects of inductance inthe current path. Two half-bridges in parallel may form a full-bridge,while three in parallel may form a three phase topology. The three phasetopology is also often referred to as a six pack, signifying the sixswitch positions among the three phase legs. Moreover, other topologiesare contemplated for the power module including common source, commondrain, and neutral point clamp.

FIG. 1A further illustrates a power module 100 having one or more switchpositions 104. The power module 100 may include a first terminal 106, asecond terminal 108, and a third terminal 110.

FIG. 1B illustrates a current loop between the DC link capacitors andswitch positions inside of the power module of FIG. 1A. The current loop114 between the DC link capacitors 102 and the switch positions 104inside of the power module 100 is crucially important in the system,having a significant influence in the switching performance of thesemiconductors.

No system is perfect; for example, undesirable parasitic resistances,capacitances, and inductances are present in any electrical system.These impedances introduce detrimental effects on the performance andreliability unless they are reduced or mitigated. While a resistance andcapacitance may be associated with each interconnection, the mostinfluential for switching power devices may be the parasitic inductance.Higher inductances result in higher stored energy in the magnetic field,which causes voltage overshoots and ringing during switchingtransitions.

FIG. 2 illustrates various interconnections and associated impedancesaccording to aspects of the disclosure. For a power conversion system,such as the half-bridge configuration of the power module 100 presentedin FIG. 1A, there are impedances 204 within each component including theDC link capacitors 102, a bussing system 202, and the power module 100,and the like and in the physical interconnections between them. This isdepicted in FIG. 2 for the inductance. More functional elements andassociated impedances are often present in power converters; however,for switching performance this loop may be the most significant.

In most power converters, these inductances must be carefully accountedfor in the system design. Often, this requires adding more DC linkcapacitors 102 or slowing down the switching speed to counter theparasitic effects. While effective, it results in a bulkier system (morelarge and heavy capacitors) with higher losses (due to a slowerswitching event where both high currents and voltages are present).

In power packages intended for Si devices, the turn-on and turn-offtimes typical of a Si IGBT are inherently slow enough that theinductances encountered in the internal power loop are sufficiently low.However, for extremely fast switching of wide band gap devices, such asSiC MOSFETs, the inductances in conventional packages can result involtage overshoots of hundreds of volts.

These issues are further amplified due to the need to parallel many SiCdevices together to reach high current levels in a power module 100. Aparalleled array of power switches and diodes in a variety ofcombinations (all switches, all diodes, interleaved diodes, edge diodes,etc.) is referred to as a ‘position’ or ‘switch position’. Each switchin the switch position 104 acts together as a single effective switch,increasing the amount of current the circuit can process or reducing theoverall loss by lowering the effective resistance.

FIG. 3 illustrates various interconnections and associated impedances ofa switch position according to aspects of the disclosure. In a switchposition 104, each switch or power device 302 has its own individualcurrent path in the structure. Each interconnection has an associatedimpedance 204, as illustrated in FIG. 3. As further shown in FIG. 3, theswitch position 104 may include any number of power devices 302 asindicated by the symbology shown at arrow 304. Care must be taken toensure that the effective current paths are equalized between the powerdevices 302, such that they each see matched inductances. Otherwise, thecurrent and voltages encountered during switching transitions may not beequivalently shared between the power devices 302 across a switchposition 104, unevenly stressing the components and increasing switchinglosses. This is exacerbated by thermal effects—uneven current loadingand switching events create uneven heat rise, which results in a driftin semiconductor properties and more instability across a paralleledswitch position 104.

Conventional power packages are typically designed for a single Si IGBT,or a small array of these devices (usually 4 or less). Consequently,they are not suitable for paralleling large numbers of SiC MOSFETs anddiodes (or similar wide band gap devices) in a manner which results inclean, well-controlled switching.

The disclosed power module 100 provides a solution for the power devices302, such as wide band gap devices, that may include one or more of thefollowing non-limiting aspects:

-   -   Reduces the internal inductance of the power module 100.    -   Facilitates equalized current paths between paralleled power        devices 302 in a switch position 104.    -   Equally shares heat between power devices 302 across a switch        position 104.    -   Has an external structure that allows for low inductance        interconnection with the DC link capacitors 102.    -   Is capable of safely carrying high currents (hundreds of amps)        at high voltages (≥1700V).

It should be appreciated that these above-noted characteristics of thepower module 100 are not required and may not be the implemented in someaspects of the disclosure.

FIG. 4A illustrates a perspective schematic view of a power moduleaccording to an aspect of the disclosure; and FIG. 4B illustrates a topschematic view of a power module according to an aspect of thedisclosure. In particular, a half-bridge configuration of the powermodule 100 is illustrated in FIG. 4A and FIG. 4B. The disclosed powermodule 100 addresses each of the previously listed concerns with acustom designed power layout and associated structure to facilitate mostcommon bridge topologies with each switch position 104 possessing anequalized, low inductance current path. The terminals 106, 108, 110 maybe arranged such that the path to the external filtering DC linkcapacitors 102 may have a correspondingly low inductance as well, withuncomplicated laminated buss bars requiring no bends or special designfeatures as described in greater detail below.

A power terminal pin-out of a single half-bridge configuration of thepower module 100 is depicted in FIG. 4A. The V+ terminal 106 and V−terminal 108 may be placed intentionally close together (with enoughspace for voltage clearances) to physically minimize the externalcurrent loop to the DC link capacitors 102.

The power module 100 may include signal terminals 502, 504, 506, 508.The specific pin-out of the signal terminals 502, 504, 506, 508 may bemodular and may be modified as necessary. The configuration isillustrated in FIG. 4A. As shown, there are four pairs of signal pinsfor the signal terminals 502, 504, 506, 508 for differential signaltransfer. Of course, any number of signal pins and any number of signalterminals may be implemented to provide the functionality as describedin conjunction with the disclosure. Each switch position 104 may utilizea pair of pins with the terminals 502, 504 for the gate signal and asource kelvin for optimal control. The other pin pairs of the signalterminals 506, 508 may be used for an internal temperature sensor,overcurrent sensing, or for other diagnostic signals. It is contemplatedthat more pins and/or more signal terminals may also be added to any ofthe rows if necessary, as long as they do not result in voltageisolation issues. In some aspects, the other diagnostic signals may begenerated from diagnostic sensors that may include strain gauges sensingvibration, and the like. The diagnostic sensors can also determinehumidity. Moreover, the diagnostic sensors may sense any environmentalor device characteristic.

FIG. 5 illustrates a plurality of single phase modules in a paralleledconfiguration according to aspects of the disclosure. Modularity isfundamental to the disclosed power module 100. A single phaseconfiguration of the power module 100 may be easily paralleled to reachhigher currents. As is illustrated in FIG. 5 there are three powermodules 100 illustrated, but there is no limit to how many could beconfigured in this manner. In this regard, arrow 510 shows thatadditional power modules 100 may be arranged in parallel. Whenparalleled, each of the corresponding terminals 106, 108, 110 may beelectrically connected between each of the power modules 100.

FIG. 6A illustrates a first power module configuration according toaspects of the disclosure; and FIG. 6B illustrates a second power moduleconfiguration according to aspects of the disclosure. Scalability of thedisclosed power modules 100 may be another defining feature. This isdepicted in FIGS. 6A and 6B. As shown in FIG. 6B, the power module 100width may be extended to accommodate more paralleled devices for eachswitch position 104 in comparison to the power module 100 shown in FIG.6A. Additional fastener holes 512 may be added to the power contacts ofthe terminals 106, 108, 110 due to the increased current of the powermodule 100. It is important to note that the power modules 100 may beparalleled as shown in FIG. 5 or may be scaled as shown in FIG. 6B tomatch most power levels without sacrificing the benefits of thisdisclosure including, for example, low inductance, clean switching, highpower density, and the like.

FIG. 7 illustrates power modules in a full bridge configurationaccording to aspects of the disclosure; FIG. 8 illustrates a powermodule in a three-phase configuration according to aspects of thedisclosure; and FIG. 9 illustrates a single power module having a fullbridge configuration according to aspects of the disclosure. In someaspects, modularity may also be found in the formation of variouselectrical topologies, such as FIG. 7 for a full-bridge configuration oftwo power modules 100 and FIG. 8 for a three-phase configuration ofthree power modules 100. For these topologies, the V+ terminal 106 andV− terminal 108 may be interconnected while the phase output terminals110 may remain separate. The configuration of FIG. 7 and FIG. 8 may alsobe placed in a single housing and may be configured with a shared baseplate as illustrated in FIG. 9, which may increase power density withthe tradeoff of higher unit complexity and cost.

While the various arrangements, configurations, and scaled width versionof the power module 100 cover a range of applications and power levels,the core internal components and layouts may remain identical. Thisreinforces the modular nature of the disclosed power module 100. Thisstructure encompasses a family of modules showcasing a high level ofperformance while being easy to use and to grow with a range of customerspecific systems.

FIG. 10 illustrates an exploded view of the power module according toaspects of the disclosure; and FIG. 11 illustrates a partial view of thepower module of FIG. 10. In particular, FIG. 10 illustrates a number ofelements in the power module 100. These elements include one or more ofa base plate 602, a gasket 604, one or more power substrates 606, one ormore edge power contacts 608, one or more switch positions 104, one ormore temperature sensors 610, housing sidewalls 612, a center powercontact 614, a signal interconnection assembly 616, a housing lid 618,fasteners 620, captive fasteners 622, and the like. Moreover, it iscontemplated that the power module 100 may include fewer or differentelements than those described herein.

The power module 100 may include the base plate 602. The base plate 602may provide structural support to the power module 100 as well asfacilitating heat spreading for thermal management of the power module100. The base plate 602 may include a base metal, such as copper,aluminum, or the like, or a metal matrix composite (MMC) which mayprovide coefficient of thermal expansion (CTE) matching to reducethermally generated stress. In one aspect, the MMC material may be acomposite of a high conductivity metal such as copper, aluminum, and thelike, and either a low CTE metal such as molybdenum, beryllium,tungsten, and/or a nonmetal such as diamond, silicon carbide, berylliumoxide, graphite, embedded pyrolytic graphite, or the like. Depending onthe material, the base plate 602 may be formed by machining, casting,stamping, or the like. The base plate 602 may have a metal plating, suchas nickel, silver, gold and/or the like, to protect surfaces of the baseplate 602 and improve solder-ability. In one aspect, the base plate 602may have a flat backside. In one aspect, the base plate 602 may have aconvex profile to improve planarity after reflow. In one aspect, thebase plate 602 may have pin fins for direct cooling.

The power module 100 may include the gasket 604. The gasket 604 mayimprove an encapsulation process by providing a liquid tight seal. Inthis regard, the power module 100 may include dielectric encapsulationwithin. The gasket 604 may be injection molded, dispensed, or the like,and may be applied in a groove in the housing sidewalls 612 andcompressed between the housing sidewalls 612 and the base plate 602.

The power module 100 may include one or more power substrates 606. Theone or more power substrates 606 may provide electrical interconnection,voltage isolation, heat transfer, and the like for the power devices302. The one or more power substrates 606 may be constructed as a directbond copper (DBC), an active metal braze (AMB), an insulated metalsubstrate (IMS), or the like. In the case of the IMS structure, the oneor more power substrates 606 and the base plate 602 may be integrated asthe same element. In some aspects, the one or more power substrates 606may be attached to the base plate 602 with solder, thermally conductiveepoxy, silver sintering or the like. In one aspect there may be twopower substrates 606, one for each switch position 104.

The power module 100 may include one or more edge power contacts 608. Asurface of one of the one or more edge power contacts 608 may form theV+ terminal or first terminal 106. A surface of one of the one or moreedge power contacts 608 may form the phase terminal or third terminal110. The one or more edge power contacts 608 may create a high currentpath between an external system and the one or more power substrates606. The one or more edge power contacts 608 may be fabricated fromsheet metal through an etching process, a stamping operation, or thelike. The one or more edge power contacts 608 may have a partialthickness bend assist line 624 to facilitate bending of the one or moreedge power contacts 608 to aid in final assembly. In one aspect, the oneor more edge power contacts 608 may be folded over the captive fastener622. In one aspect, the one or more edge power contacts 608 may besoldered, ultrasonically welded, or the like directly to the powersubstrate 606. The one or more edge power contacts 608 may have a metalplating, such as nickel, silver, gold, and/or the like to protect thesurfaces and improve solder-ability.

In one aspect, a base 636 of the edge power contact 608 may be splitinto feet to aid in the attach process. The base 636 may have a metalplating, such as nickel, silver, and/or gold to protect the surfaces andimprove solder-ability.

The power module 100 may further include one or more switch positions104. The one or more switch positions 104 may include the power devices302 that may include any combination of controllable switches and diodesplaced in parallel to meet requirements for current, voltage, andefficiency. The power devices 302 may be attached with solder,conductive epoxy, a silver sintering material, or the like. The upperpads on the power devices 302, including the gate and the source, may bewire bonded to their respective locations with power wire bonds 628. Thepower wire bonds 628 may include aluminum, an aluminum alloy, copper, orthe like wires, which may be ultrasonically welded, or the like at bothfeet, forming a conductive arch between two metal pads. Signal bonds 626may be formed in a similar manner and may be aluminum, gold, copper, orthe like. In some aspects, the diameter of the wire of the power wirebonds at 626 may be smaller than the wire of the power wire bonds 628.

The power module 100 may further include one or more temperature sensors610. The one or more temperature sensors 610 may be implemented withresistive temperature sensor elements attached directly to the powersubstrate 606. Other types of temperature sensors are contemplated aswell including resistance temperature detectors (RDTs) type sensors,Negative Temperature Coefficient (NTC) type sensors, optical typesensors, thermistors, thermocouples, and the like. The one or moretemperature sensors 610 may be attached with solder, conductive epoxy, asilver sintering material, or the like, and then may be wire bonded tothe signal interconnection assembly 616. The power module 100 mayfurther include one or more diagnostic sensors that may include straingauges sensing vibration, and the like. The diagnostic sensors can alsodetermine humidity. Moreover, the diagnostic sensors may sense anyenvironmental or device characteristic.

The power module 100 may further include housing sidewalls 612. Thehousing sidewalls 612 may be formed of a synthetic material. In oneaspect, the housing sidewalls 612 may be an injection molded plasticelement. The housing sidewalls 612 may provide electrical insulation,voltage creepage and clearance, structural support, and cavities forholding a voltage and moisture blocking encapsulation. In one aspect,the housing sidewalls 612 may be formed in an injection molding processwith reinforced high temperature plastic.

The power module 100 may further include the center power contact 614. Asurface of the center contact 614 may form the V− terminal or secondterminal 108. The center power contact 614 may create a high currentpath between an external system and the power devices 302. The centerpower contact 614 may be fabricated from sheet metal through an etchingprocess, a stamping operation, or the like. The center power contact 614may be isolated from the underlying power substrate 606 by beingembedded in the housing sidewalls 612 (as illustrated) or may besoldered or welded to a secondary power substrate as described below.The center power contact 614 may include one or more apertures 632 asshown in FIG. 11 for receiving a corresponding fastener 634 that fastensthe center power contact 614 to the housing sidewalls 612.

The low side switch position power devices 302 may be wire bonded 640directly from their terminals to the center power contact 614 asillustrated in FIG. 11. The center power contact 614 may have a partialthickness bend assist line 624 to aid in folding at the final assemblystage. The center power contact 614 may have a metal plating, such asnickel, silver, gold, and/or the like to protect the surfaces andimprove bond-ability.

The power module 100 may further include the signal interconnectionassembly 616. The signal interconnection assembly may be a gate-sourceboard. The signal interconnection assembly 616 may be a small signalcircuit board facilitating electrical connection from the signalcontacts to the power devices 302. The signal interconnection assembly616 may allow for gate and source kelvin connection, as well asconnection to additional nodes or internal sensing elements. The signalinterconnection assembly 616 may allow for individual gate resistors foreach of the power devices 302. The signal interconnection assembly 616may be a printed circuit board, ceramic circuit board, flex circuitboard, embedded metal strips, or the like arranged in the housingsidewalls 612. In one aspect, the signal interconnection assembly 616may include a plurality assemblies. In one aspect, the signalinterconnection assembly 616 may include a plurality assemblies, one foreach switch position 104.

The power module 100 may further include the housing lid 618. Thehousing lid 618 may be a synthetic element. In one aspect, the housinglid 618 may be an injection molded plastic element. The housing lid 618may provide electrical insulation, voltage creepage and clearance, andstructural support. In this regard, the housing lid 618 together withthe housing sidewalls 612 may form a closed assembly. The closedassembly may prevent the ingress of foreign materials from entering theinterior of the power module 100. In one aspect, the housing lid 618 maybe formed in an injection molding process with reinforced hightemperature plastic.

The power module 100 may further include the fasteners 620. Thefasteners 620 may be thread forming screws. Other types of fasteners arecontemplated as well. The fasteners 620 may be used to screw directlyinto the housing sidewalls 612 to fasten down multiple elements in thepower module 100. The fasteners 620 may be used for housing lid 618attachment, signal interconnection assembly 616 attachment, embeddingthe center power contact 614 (if it is not embedded through anothermeans), for fastening the housing sidewalls 612 to the base plate 602,and the like.

The power module 100 may further include the captive fasteners 622. Thecaptive fasteners 622 may be hex nuts placed in the housing sidewalls612 and housing lid 618 and may be held captive underneath the edgepower contacts 608 and the center power contact 614 after they arefolded over. Other types of fasteners or connectors are contemplated toimplement the captive fasteners 622. The captive fasteners 622 mayfacilitate electrical connection to external buss bars or cables. Thecaptive fasteners 622 may be arranged such that when the power module100 is bolted to buss bars, the captive fasteners 622 and the edge powercontacts 608 are pulled upwards into the bussing, forming a betterquality electrical connection. If the captive fasteners 622 were affixedto the housing, they could act to pull the bussing down into the powermodule 100, which could form a poor connection due to the stiffness ofthe buss bars.

In one aspect, the housing lid 618 may include an aperture having ashape consistent with the external shape of the captive fasteners 622 toprevent the captive fasteners 622 from rotating. A correspondingfastener (shown in FIG. 26) may be received by the captive fasteners622. The corresponding fastener extending through a fastener hole 512 inthe center power contact 614 to facilitate electrical connection toexternal buss bars or cables.

In one aspect, the housing sidewalls 612 may include an aperture havinga shape consistent with the external shape of the captive fasteners 622to prevent the captive fasteners 622 from rotating. A correspondingfastener (shown in FIG. 26) may be received by the captive fasteners622. The corresponding fastener extending through a fastener hole 512 inthe one or more edge power contacts 608 to facilitate electricalconnection to external buss bars or cables.

To achieve a low internal inductance, current paths of the power module100 may be wide, short in length, and overlap whenever possible toachieve flux cancellation. Flux cancellation occurs when the currenttraveling through the loop moves in opposing directions in closeproximity, effectively counteracting their associated magnetic fields. Aprincipal benefit of this module approach is that the entire width ofthe footprint is utilized for conduction. Module height may be minimizedto reduce a length the current must travel through the structure.

The power loop for a half-bridge phase leg is illustrated in FIG. 11,with the edge power contacts 608 and center power contact 614 folded upto show detail. The wide, low profile edge power contact 608 and centerpower contact 614 brings in the current directly to the power devices302. The effective current path from the terminal surfaces to individualpower devices 302 may be functionally equivalent. Additionally, thepower devices 302 may be placed in close proximity, minimizingimbalances in their relative loop inductances and ensuring excellentthermal coupling.

FIG. 12A illustrates a top view of the phase leg of the power moduleconstructed according to the disclosure, with each node identified in ahalf-bridge topology; and FIG. 12B illustrates a schematic of the phaseleg of the power module constructed according to the disclosure, witheach node identified in a half-bridge topology according to FIG. 12A.The power module 100 may include one or more diodes. In one aspect, thediode in the schematic may be a discrete diode placed in antiparallel(not illustrated). In one aspect, the diode in the schematic may be arepresentation of the body diode of the power device 302 implemented asa MOSFET (as illustrated).

In one aspect, the current path may begin at the V+ node terminal 608,which may be attached to the power substrate 630 and drains D1 of theupper one of the power devices 302. The sources S1 of the upper one ofthe power devices 302 may then wire bonded 628 to a lower powersubstrate pad 630, which is attached to the drains D2 of the low sidepower devices 302, as well as the phase power terminal 608. Finally, thesources S2 of the low side power devices 302 may be wire bonded 628 tothe V− power contact terminal 614, which may be above the lower powersubstrate 630 providing some overlap and may be sufficiently voltageisolated from the underlying substrate 630.

FIG. 13 illustrates a cross section view of the phase leg of FIG. 12Aand FIG. 12B; and FIG. 14 illustrates a cross section view of the phaseleg of FIG. 12A and FIG. 12B that includes a current path. As shown inFIG. 13, tabs of the power contacts or terminals 106, 108, 110 arefolded over as they are in the final configuration of the power module100 structure. Layer thicknesses are exaggerated to show detail. Allelements in this figure can be considered to be conductors whenvisualizing current flow.

FIG. 13 further illustrates the terraced, multiple height, or multipleelevation configuration of the power module 100. In this regard, avertical position of the terminal 614 is shown higher than the verticalposition of the terminal 608. The height difference is indicated byarrow 702. This multiple height configuration may provide the criticalloop described in greater detail below. Moreover, the multiple heightconfiguration may assist in providing a buss connection, which isfurther described below as well.

FIG. 14 presents an overlay of the current path from the V+ terminal tothe V− terminal, representing the critical loop for clean switchingaccording to aspects of the disclosure. Inductance is proportional to apath length, lessens with increased cross-sectional area of theconductors, and is reduced with flux cancellation in the magnetic field.The identified path starts at terminal 608 and flows through the powersubstrate 630 across the power devices 302 on to a second substrate 630through power device 302 and output by the terminal 614. The identifiedpath is low inductance, owing to the following factors:

-   -   Low height of the module.    -   Close proximity of the power device 302 to the terminals 608,        614.    -   Tight packing of all functional elements.    -   Wide cross-sectional area of the conductors.    -   Optimized paralleled wire bonds 628 for each power device 302.    -   Even current sharing between the power devices 302.    -   Flux cancellation when the current direction reverses in the low        side switch position.    -   Flux cancellation in the external V+/V− buss bars.

FIG. 15 illustrates contact surfaces of the power module together withbussing according to an aspect of the disclosure. The contact surfacesof the V+ terminal 608 and phase terminal 608 may be planar, while thetop of the V− terminal 614 is offset from the others. This featureallows for the external V+/V− laminated bussing 802, 804 to contact bothterminals 608, 614, without requiring a bend in the laminated bussing802, 804, as illustrated in FIG. 15. The offset distance 702(illustrated in FIG. 13) may be adjusted to match the thickness of thebuss bar metal and an associated dielectric isolation film.

The low internal module inductance combined with the minimized externalinductance in the bussing 802, 804, 806 to the DC link capacitors 102bank results in an optimized structure of the power module 100 forclean, rapid switching events with low voltage overshoot and stableperformance. Less loop inductance results in a reduced total capacitancerequired on the DC link capacitors 102.

These benefits, altogether, allow for lower switching losses, higherswitching frequencies, improved controllability, and reduced EMI.Ultimately, this helps system designers achieve more power dense androbust power conversion systems.

FIGS. 16A, 16B, and 16C illustrate various aspects of a terminal of thepower module according to aspects of the disclosure. A multilayer layoutwhere the V− terminal 614 is in the middle of the power module 100 maybe essential to this design. Suitable voltage isolation of this terminal614, which lays directly over an output trace on the power substrate630, may be realized through a variety of constructions that form anisolation structure. This power module 100 design is compatible witheach of the following:

FIG. 16A illustrates one aspect of the isolation of the V− terminal 614.In this aspect, the power module 100 may include an embedded isolation810 of the V− terminal 614. The embedded isolation 810 may be formedwith a plastic or other synthetic material. The embedded isolation 810may be located in the housing sidewalls 612 as a strip 810 bridging acenter region. In one aspect, the strip 810 may be formed of plastic.The power contact 614 may be embedded in the strip 810 through a numberof methods, including mechanical fastening such as with a thread formingscrew, direct integration such as through a plastic over-moldingprocess, riveted in place with a plastic heat staking operation, or thelike.

FIG. 16B illustrates another aspect of the isolation of the V− terminal614. In this aspect, the power module 100 may form the isolation of theV− terminal 614 by a power substrate isolation. In this regard, asecondary power substrate 812 may be utilized to provide the isolationthrough its layer of dielectric material, such as a ceramic or the like.This secondary power substrate 812 made be soldered, sintered, orepoxied to the power substrate 630, while the power contact 614 may besoldered or welded to the upper metal pad on the secondary substrate. Abenefit of this approach is the improved heat transfer of the centerpower contact 614, as the secondary power substrate 812 is highlyconductive and would facilitate heat removal from the power contact 614to a cold plate or heat sink.

FIG. 16C illustrates another aspect of the isolation of the V− terminal614. In this regard, a thick film isolation 814 may be utilized. Thethick film isolation 814 may utilize a printed thick film dielectricdirectly on the power substrate 630 and may provide voltage blocking.The center contact 614 may be attached to the thick film isolation 814through an epoxy, directly soldered to a thin layer of metal thick filmprinted on top of the dielectric film, or the like.

In other aspects, the isolation of the V− terminal 614 may includesuspension isolation (not shown). In this aspect, the central powercontact 614 may be suspended a sufficient distance over the powersubstrate 630 and attached to the housing sidewalls 612 in a similarmanner to the embedded approach. In this regard, gel encapsulationfilling the power module 100 may provide dielectric isolation. Thecenter contact 614 may need to utilize a high stiffness material,however, to not hinder the formation of power wire bonds 628 between thelow side devices and the contact.

FIG. 17 schematically illustrates a plurality of devices in parallelaccording to aspects of the disclosure. In particular, FIG. 17 showsthree power devices 302. This is merely exemplary and for ease ofillustration and understanding. The power module 100 of the disclosuremay include any number of power devices 302.

The gate control and sense signals factor prominently into switchingperformance of the power module 100 and may be of particular importancein a paralleled switch position 104. The signal loops may be optimizedin the power module 100 for high performance, robustness, and uniformcurrent sharing. Similar to the power loops, the paths may be configuredto be limited in length, wide in cross section, and the associatedexternal components may be placed as physically close as possible to thesignal terminals 502, 504.

For a paralleled array of power devices 302 such as transistors,particularly MOSFETs, the timing and magnitude of the gate currents mustbe balanced to result in consistent turn-on and turn-off conditions. Thepower module 100 may utilize individual ballasting resistors R_(G1),R_(G2), R_(G3) that may be placed in close proximity to the gate of thepower devices 302, only separated by the gate wire bond. Thesecomponents are of a low resistance and aid in buffering a currentflowing to each individual power device 302. These components act todecouple the gates of the power devices 302, preventing oscillations andhelping to ensure an equalized turn on signal for the paralleled powerdevices 302. A singular external resistor R_(DRIVER) may be utilized andconnected to these paralleled resistors R_(G1), R_(G2), R_(G3) forcontrolling the turn on speed of the effective switch position 104.

The gate resistors R_(G1), R_(G2), R_(G3) may be a surface mountpackage, an integrated thick film layer, printed thick film, a wirebondable chip, or the like depending on the application.

FIG. 18 illustrates a perspective view of the effective gate switchingloop according to an aspect of the disclosure; and FIG. 19 illustrates atop view of the effective gate switching loop according to an aspect ofthe disclosure. The signal substrate or signal interconnection assembly616 may have rails 816, 818 connecting to the gate and source kelvinconnector terminals 502, 504 on the edge of the board of the signalinterconnection assembly 616. The upper rail 818 may connect to gatewire bond pads through individual gate resistors 820, while the lowerrail 816 may directly wire bond to the source pad of the power device302. This may be considered a true kelvin connection, as the sourcekelvin bond is not in the current path of the power source bonds. Akelvin connection may be important for clean and efficient control,reducing the influence of the high drain to source current on the signalloop.

FIG. 18 and FIG. 19 further illustrate optional signal connections 506,508 on the left hand side of the signal interconnection assembly 616.These connections may be used for temperature measurement or other formsof internal sensing. In some aspects, the internal sensing may includediagnostic sensing that includes diagnostic signals that may begenerated from diagnostic sensors that may include strain gauges sensingvibration, sensors sensing humidity, and the like. Moreover, thediagnostic sensors may sense any environmental or device characteristic.In one aspect, the temperature sensor 610 may be placed on the low sideposition. Of course other locations and arrangements for the temperaturesensor 610 are contemplated as well. In one aspect, a wire bond may beplaced on the upper pad next to the drain trace (e.g., next to a powerdevice 302) for overcurrent measurement (also referred to asdesaturation protection in the case of IGBTs). Of course other locationsand arrangements for overcurrent measurement are contemplated as well.In some aspects, an overcurrent sensor or desaturation sensor may sensethe voltage drop as determined by connections to the drain of the powerdevices 302. In some aspects, current can also be sensed by voltage dropacross the power devices 302.

This implementation of this signal loop or the signal interconnectionassembly 616 may ensure quality control and measurements across anycombination of paralleled power devices 302 in the switch position 104.Standard PCB board-to-board connectors may allow for a straightforwardconnection to external gate driver and control circuitry.

This gate distribution network, as shown, may be implemented with a PCB.It may also be formed as a thick film circuit directly on the primarypower substrate 630, directly on the base plate 602, or the like. Thishas the benefit of reducing the part count of the power module 100 aswell as the option to print the gate resistors 820. The gate resistors820 may be much smaller than the size of the surface mount parts on aPCB, as there may be no need for solder terminals and the gate resistors820 may be actively cooled from the cold plate, minimizing thermalsizing constraints of the component.

FIG. 20 illustrates a partial exemplary implementation that includes apower module according to aspects of the disclosure. In this regard,FIG. 20 is a representative exemplary structure implementing the powermodule 100 of the disclosure in a high performance system. This generalapproach applies to many other configurations and topologies, serving asa useful example of how to utilize the power module 100 in a converter.This specific example is for a three phase motor drive. In this aspect,there are three power modules 100.

The disclosed power modules 100 may be configured in an array ofhalf-bridge phase legs (three, as illustrated). Additional power modules100 may be included in parallel to increase the current as needed forthe application.

The FIG. 20 implementation may further include a cold plate 902. Thecold plate 902 may be high performance liquid cold plate, heat sink, orthe like, serving to transfer waste heat away from the power modules 100to another source (liquid, air, etc.).

The FIG. 20 implementation may further include the DC link capacitors102. The DC link capacitors 102 may be implemented as filteringcapacitors interfacing a source of DC power and the power module 100. Inone aspect, the DC link capacitors 102 may be implemented as a singlecapacitor. In another aspect, the DC link capacitors 102 may beimplemented as multiple components forming a ‘bank’ of capacitors,depending on the power demands of the load and/or the particularapplication.

The FIG. 20 implementation may further include cold plate standoffs 904.The cold plate standoffs 904 may provide structural support to the coldplate 902. The cold plate standoffs 904 may be configured as shown,elevating and placing the power module 100 terminals 106, 108 in-planewith capacitor contacts 906. In this aspect, flat buss bars with nobends can interconnect the components. For higher power density or fordifferent types of capacitors, the height of the cold plate standoffs904 may be adjusted to best utilize the form factor available for theelements of the converter. This may have a corresponding tradeoff ofincreasing the electrical loop length as transition bends could benecessary, and will depend on system specific requirements.

FIG. 21 illustrates an exemplary laminated buss bar according to thedisclosure; FIG. 22 illustrates one portion of the exemplary laminatedbuss bar according to FIG. 21; and FIG. 23 illustrates another portionof the exemplary laminated buss bar according to FIG. 21. The powerterminal layout may be designed to facilitate simple and effective bussbar interconnection. To minimize inductance between the DC linkcapacitors 102 and the terminals 106, 108 of the power module 100, bussbars 900 may have thick conductors 910, 912 and the thick conductors910, 912 of the buss bars 900 may overlap. The thick conductors 910, 912may be separated by a thin dielectric film 914. Current travels througheach sheet of the thick conductors 910, 912 in opposing directions,acting to greatly reduce the effective inductance between the powerdevices 302 and the filtering DC link capacitors 102. The upper layersof the thick conductor 910 may be embossed to form co-planar contacts918 at the mating surface to the DC link capacitors 102 eliminating theneed for washers or spacers, which can interfere with electricalperformance.

An example laminated buss bar 900, matching the system level layoutpresented above may include one or more of a conductor V+ plane 912, aconductor V− plane 910, and a dielectric film 914.

The conductor V+ plane 912 may connect the V+ terminal 106 of the powermodule 100 through contacts 926 to the V+ terminal of the DC linkcapacitor(s) 102 through contacts 928, as well as having terminals 920for external connection.

The conductor V− plane 910 may connect the V− terminal 108 of the powermodule 100 through contacts 924 to the V− terminal of the DC linkcapacitor(s) 102 through contacts 918, as well as having terminals forexternal connection 922. The contacts 918, 924, 926, 928 and theterminals 920, 922 may each be implemented with a fastener apertureconfigured to receive a fastener to form an electrical connection. Otherelectrical connection implementations are contemplated as well. Theconductors 910, 912 may include apertures 940. The apertures 940 in oneof the conductors 910, 912 allow for access to the contacts in anotherone of the conductors 910, 912.

The dielectric film 914 may be implemented as a thin electricalinsulator placed between the overlapping metal layers of the conductors910, 912. The dielectric film 914 may provide dielectric insulationaccording to electrical safety standards. The dielectric film 914 may bekept as thin as possible to minimize inductance. A film may also coverthe tops and bottoms of the laminated buss bar 900 in all areas that donot require an electrical connection. The edges 916 of the laminatedbuss bar 900 may be sealed through a variety of methods, including apinch seal lamination, epoxy seal, a dielectric insert, or the like,depending on geometry and available space. In some aspects, thedielectric film 914 material may be adhered to the laminated buss bar900 with an acrylic adhesive. In some aspects, the laminated buss bar900 may include a pinch seal with a polymer material. In some aspects,the laminated buss bar 900 may be subsequently subjected to pressure,heat, and time to form the laminate.

In some aspects, the buss bar 900 and the conductors 910, 912 have agenerally planar construction. More specifically, the buss bar 900 mayhave a generally flat upper surface and a generally flat lower surfaceas shown in FIG. 15. In some aspects, the thickness of one of theconductors 910, 912 along with the dielectric film 914 defines theoffset distance 702 illustrated in FIG. 13. In one aspect, the thicknessof one of the conductors 910, 912 along with the dielectric film 914 maybe 0.5 mm to 10 mm, which corresponds to the offset distance 702. In oneaspect, the thickness of one of the conductors 910, 912 along with thedielectric film 914 may be 1 mm to 2 mm, which corresponds to the offsetdistance 702. In one aspect, the thickness of one of the conductors 910,912 along with the dielectric film 914 may be 0.5 mm to 1 mm, whichcorresponds to the offset distance 702. In one aspect, the thickness ofone of the conductors 910, 912 along with the dielectric film 914 may be2 mm to 3 mm, which corresponds to the offset distance 702. In oneaspect, the thickness of one of the conductors 910, 912 along with thedielectric film 914 may be 3 mm to 4 mm, which corresponds to the offsetdistance 702. In one aspect, the thickness of one of the conductors 910,912 along with the dielectric film 914 may be 4 mm to 5 mm, whichcorresponds to the offset distance 702. In one aspect, the thickness ofone of the conductors 910, 912 along with the dielectric film 914 may be5 mm to 6 mm, which corresponds to the offset distance 702. In oneaspect, the thickness of one of the conductors 910, 912 along with thedielectric film 914 may be 6 mm to 7 mm, which corresponds to the offsetdistance 702. In one aspect, the thickness of one of the conductors 910,912 along with the dielectric film 914 may be 7 mm to 8 mm, whichcorresponds to the offset distance 702. In one aspect, the thickness ofone of the conductors 910, 912 along with the dielectric film 914 may be8 mm to 9 mm, which corresponds to the offset distance 702. In oneaspect, the thickness of one of the conductors 910, 912 along with thedielectric film 914 may be 9 mm to 10 mm, which corresponds to theoffset distance 702.

FIG. 24 illustrates a phase output buss bar according to the disclosure.For a three phase motor drive, as in this example, the phase outputs 930may not require lamination or overlapping to minimize inductance. Thisis due to the fact that the phase output buss bars 930 are drivinginductive loads, which limits the need to reduce inductance on theoutput paths. Accordingly, the phase output buss bars 930 may bestandalone elements and may be much less complex than the laminated DClink structure. The phase output buss bars 930 may include apertures 934for receiving a fastener to form an electrical connection.

It is highly desirable to measure the output current from each phase.This can be performed through a number of methods, such as adding in alow resistance series resistor (called a shunt) and measuring thevoltage drop across it, including a sensor that measures the magneticfield generated by the current and providing a proportional signal to acontroller, or the like. FIG. 24 illustrates one of the output buss bars930 for this system as well as a configuration to improve measurementaccuracy by adding a ferrous shield 932 to focus the magnetic field in aregion where the sensor may be located.

The phase output buss bar 930 or conductor may be configured to providetransitions from the phase output terminal 110 of each power module 100to an external terminal connection. The form and arrangement of thephase output buss bar 930 or conductor may vary and depend on thespecific topology or arrangement of the power modules 100.

The ferrous shield 932 or magnetic field concentrator may be configuredto focus the magnetic field generated by current flow in a target regionwhere a sensor may be placed. This may not be required for operation butis a highly advantageous arrangement to extract output currentmeasurements in most converter systems.

FIG. 25 illustrates a perspective view an exemplary implementation thatincludes a power module and laminated buss bar according to aspects ofthe disclosure; FIG. 26 illustrates a first cross-sectional view of anexemplary implementation that includes a power module and laminated bussbar according to FIG. 25; and FIG. 27 illustrates a secondcross-sectional view of an exemplary implementation that includes apower module and laminated buss bar according to FIG. 25. FIGS. 25-27illustrate the motor drive system layout with the laminated buss bar 900structures described above. As shown in FIGS. 25-27, the system mayinclude the power module 100 array, cold plate 902 assembly, the DC linkcapacitor 102, the DC link laminated buss bar 900 assembly, and theoutput contact buss bars 930.

A cross-section of the terminals of the DC link capacitors isillustrated in FIG. 26. FIG. 26 illustrates the embossed co-planarconnections 918 featured in the buss bars 900, as well as the highdegree of metal lamination in every feasible location. The onlyseparation between the plates 910, 912 may be the minimum area requiredfor the sheet metal fabrication processes (emboss tools, work holding,tolerances, etc.) and for dielectric isolation 914 (edge seals,creepage, clearance).

The cross section across the power module 100 shown in FIG. 27illustrates the optimized overlapping critical loop from the bank of theDC link capacitors 102 to the terminals 106, 108 of the power module100. This reinforces the concept discussed in FIG. 15 with actualrepresentative components and physical design restraints.

In all, this low inductance, high current interconnection structure maybe necessary for and enabled by the disclosed power module design.Together, they form an effective and highly integrated low inductancepath between the bank of the DC link capacitors 102 and the switchpositions 104. This structure allows for efficient, stable, and veryhigh frequency switching of the power devices 302 such as wide band gapsemiconductors.

FIG. 28 illustrates an exemplary single module gate driver according tothe disclosure. The gate driver acts as a power amplifier deliveringdrive current to the switch positions 104 while providing voltageisolation between a controller and high voltage power stages. Isolationmay also be maintained between driver blocks between switch positions104. For high frequency switching, the output stage of the drivers maybe physically located close to the switch positions 104.

Additional features may be included for safety, such as under voltage,over voltage, and over current protection. A gate driver circuit may beconfigured to ensure the power module 100 is always functioning in asafe operating region and will shut down carefully in the event of afailure.

With this power module design, the gate drivers may be seated directlyabove the laminated power bussing 900. They may be formed as a singlePCB and racked up or scaled in the same modular fashion as the powermodules 100. Alternatively, the drivers may also be integrated on asingle PCB across an array of power modules 100, saving size butincreasing complexity due to the multiple high voltage nodes on theboard. The output stage of the drivers may be located directly next tothe board to board connector making contact with the module signal pins.

An example single module gate driver 400 is presented in FIG. 28. Thesingle module gate driver 400 elements may be duplicated for each switchposition 104. The arrangement and specific layout of each block may besystem dependent and are configured in this drawing as a generalizedexample.

The single module gate driver 400 elements may include one or more ofcontrol signal connector 410, isolated power supply 420, signalisolation and conditioning component 430, amplifier stage 440, bulk gateresistor and local current filter 450, sensors and protection components460, power module signal connector 470, and creepage extension slots480. The single module gate driver 400 may be arranged on a printedcircuit board (PCB 402).

The control signal connector 410 may be configured to interface thecontroller and the gate driver such that the differential control andsensor signals may be transferred between the two through a cable, boardto board connector, or similar mechanism.

The isolated power supply 420 may be implemented as a DC-DC converterproviding the required positive and negative voltages for turn-on andturn-off of the power devices 302. The isolated power supply 420 may behigh enough power to source the current needed by the power devices 302.Isolation between the control and power stages may be a vital functionof this block.

The signal isolation and conditioning component 430 may includecircuitry to provide isolation of the control signals between the lowvoltage control and the high voltage power, as well as conditioning thecontrol signals for the amplifier stage 440 of the driver.

The amplifier stage 440 may be formed of discrete or integratedcomponents. The amplifier stage 440 may transform the isolated low powercontrol signals into the currents and voltages required by the switchposition 104 to operate. This should be as physically close to themodule signal terminals as possible for clean switching.

The bulk gate resistor and local current filter 450 may be the finalstage before transition to the output pins, the bulk gate resistor andlocal current filter 450 and may be used to tune the turn-on andturn-off times of the switch position 104 to match the needs of aparticular system. These may be a single set of passive elements, or aspart of a network with different resistance values for turn-on andturn-off if different switching characteristics are desired. A localfilter may also be used to ensure a quality source of current ismaintained during switching events.

The sensors and protection components 460 may include circuitry, whichmay include under and over voltage protections, over currentprotections, temperature sensing, and mechanisms for a safe shut down inthe event of a failure.

The power module signal connector 470 may be located on the underside ofthe PCB 402. The power module signal connector 470 may interface thegate driver and the power module 100, providing a direct connection tothe gate distribution network internal to the power module 100. This maybe typically facilitated with a board to board connector, a directsolder connection, or the like. A wire to board connection is alsopossible, but may need the driver to be physically close to the powermodule 100.

The creepage extension slots 480 may be configured to improve voltageisolation between driver stages, allowing for a more compact packing ofthe components. Voltage isolation is an increasing challenge as the sizeof high voltage power modules continues to shrink. Cutting a slot in thePCB 402 may be one option to increase the voltage creepage distancewithout adding board size. Other options include local potting ofcritical nodes and fully covering the entire assembly with a conformaldielectric coating. More specifically, the various components of thepower module 100 including the PCB 402 may include discrete and/or localpotting of one or more components; and the various components of thepower module 100 including the PCB 402 may include conformal dielectriccoating on one or more components, the entire PCB 402, and/or otherassemblies of the power module 100.

When integrated together as shown in FIG. 29, the gate driver 400 andpower module 100 form a compact single unit with an optimized lowinductance signal flow from the control source, through isolation,amplified, and then distributed through the gate resistor networkdirectly to the gates of the paralleled power devices 302.

FIG. 30 illustrates a current sensing component according to aspects ofthe disclosure; and FIG. 31 illustrates a current sensing componentarranged with phase output buss bars according to FIG. 30. There aremultiple methods to sense current. In one aspect of the disclosureillustrated in FIGS. 30 and 31, sensors 980 such as a non-contactmagnetic sensors may be utilized. The sensors 980 may be utilized with aferrous shield 932 to focus the magnetic field. The sensors 980 mayutilize a small sensor chip placed in this region which produces aproportional signal to the output current. An example of the sensors ona single PCB 936 for all three phases is illustrated in FIG. 30, and thefull output buss bar structure with the magnetic shields is illustratedin FIG. 31.

FIG. 32 illustrates an exemplary three phase motor drive power stack-upaccording to an aspect of the disclosure. In particular, FIG. 32illustrates an exemplary three phase motor drive power stack-up with allof functional components described previously. The FIG. 32 system ishighly integrated and heavily optimized for peak electrical performance.Additional features such as voltage sensing of the capacitor bank andEMI shielding enclosures are contemplated and would integrate wellwithin this high performance core.

FIG. 33 schematically illustrates a plurality of power devices inparallel according to aspects of the disclosure. In particular, FIG. 33shows four power devices 302. This number of the power devices 302 ismerely exemplary and for ease of illustration and understanding. Thepower module 100 of the disclosure may include any number of the powerdevices 302.

The gate control and sense signals factor prominently into switchingperformance of the power module 100 and may be of particular importancein a paralleled switch position 104. The signal loops may be optimizedin the power module 100 for high performance, robustness, and uniformcurrent sharing. In some aspects, a multilayer printed circuit board(PCB) for the signal loop may be utilized. In these aspects, parallelplanes may be used for flux cancellation and further inductancereduction. Hence, the wide, short paths can double back on themselves tocancel out the magnetic field. This helps provide the best signal looppossible given the geometrical constraints of the power module 100.Similar to the power loops, the paths may be configured to be limited inlength, wide in cross section, and the associated external componentsmay be placed as physically close as possible to the signal terminals502, 504.

For a paralleled array of power devices 302 such as transistors,particularly MOSFETs, the timing and magnitude of the gate currents mustbe balanced to result in consistent turn-on and turn-off conditions. Thepower module 100 may utilize individual ballasting resistors 820(R_(G1), R_(G2), R_(G3), R_(G4)) that may be placed in close proximityto the gate of the power devices 302, only separated by the gate wirebond. The individual ballasting resistors 820 (R_(G1), R_(G2), R_(G3),R_(G4)) may be of low resistance and aid in buffering a current flowingto each individual power device 302. The individual ballasting resistors820 (R_(G1), R_(G2), R_(G3), R_(G4)) act to decouple the gates of thepower devices 302, preventing oscillations and helping to ensure anequalized turn on signal for the paralleled power devices 302. Asingular external resistor R_(DRIVER) may be utilized and connected tothese paralleled resistors 820 (R_(G1), R_(G2), R_(G3), R_(G4)) forcontrolling the turn on speed of the effective switch position 104. Inone aspect, a ballasting resistor 820 may be associated with each powerdevice 302. In one aspect, an individual ballasting resistor 820 may beassociated with each individual power device 302.

In additional aspects, the power module 100 may utilize individualballasting source Kelvin resistors 822 (R_(S1), R_(S2), R_(S3), R_(S4))that may be placed in close proximity to the source Kelvin connection ofthe power devices 302. In one aspect, the source Kelvin resistors 822(R_(S1), R_(S2), R_(S3), R_(S4)) may only be separated by the sourceKelvin wire bond. In one aspect, a source Kelvin resistor 822 may beassociated with each power device 302. In one aspect, an individualsource Kelvin resistor 822 may be associated with each individual powerdevice 302. The source Kelvin resistors 822 (R_(S1), R_(S2), R_(S3),R_(S4)) may be of a low resistance and aid in buffering a currentflowing to the source Kelvin connection of each of the individual powerdevice 302. The source Kelvin resistors 822 (R_(S1), R_(S2), R_(S3),R_(S4)) may act to decouple the source Kelvin connections of the powerdevices 302, preventing oscillations and helping to ensure an equalizedsignal for the paralleled power devices 302. In particular aspects, thesource Kelvin resistors 822 (R_(S1), R_(S2), R_(S3), R_(S4)) may beconfigured and implemented to address any mismatch of the individualpower devices 302, a layout of the individual power devices 302, and thelike.

In particular aspects, the source Kelvin resistors 822 (R_(S1), R_(S2),R_(S3), R_(S4)) may be configured and implemented to prevent or reducefeedback oscillation between the individual power devices 302, dampenfeedback oscillation between the individual power devices 302, decouplethe source Kelvin signals between the individual power devices 302,inhibit current flowing between the source Kelvin signals for theindividual power devices 302, equalize current flowing between thesource Kelvin signals for the individual power devices 302, forcecurrent flowing through the individual power devices 302 to flow througha current path, and the like. Moreover, the source Kelvin resistors 822(R_(S1), R_(S2), R_(S3), R_(S4)) may reduce signaling inductance, ensuregate operation of the power devices 302 is not slowed, minimizegate/source over-voltage in the power devices 302, and the like.

The source Kelvin resistors 822 (R_(S1), R_(S2), R_(S3), R_(S4)) may bea surface mount package, an integrated thick film layer, printed thickfilm, a wire bondable chip, a “natural” resistance path(material/structure interface that inherently adds resistance), or thelike depending on the application. In one or more aspects, theresistance value of the source Kelvin resistors 822 (R_(S1), R_(S2),R_(S3), R_(S4)) and the resistors 820 (R_(G1), R_(G2), R_(G3), R_(G4))may be equivalent. In one or more aspects, the resistance value of thesource Kelvin resistors 822 (R_(S1), R_(S2), R_(S3), R_(S4)) and theresistors 820 (R_(G1), R_(G2), R_(G3), R_(G4)) may be different. In oneor more aspects, the resistance value of the source Kelvin resistors 822(R_(S1), R_(S2), R_(S3), R_(S4)) may be in the range of 0.5 ohms-1.5ohms. In one or more aspects, the resistance value of the source Kelvinresistors 822 (R_(S1), R_(S2), R_(S3), R_(S4)) may be in the range of0.5 ohms-2 ohms. In one or more aspects, the resistance value of thesource Kelvin resistors 822 (R_(S1), R_(S2), R_(S3), R_(S4)) may be inthe range of 0.5 ohms-5 ohms. In one or more aspects, the resistancevalue of the source Kelvin resistors 822 (R_(S1), R_(S2), R_(S3),R_(S4)) may be in the range of 0.5 ohms-20 ohms. In one or more aspects,the resistance value of the resistors 820 (R_(G1), R_(G2), R_(G3),R_(G4)) may be in the range of 1 ohms-20 ohms. In one or more aspects,the resistance value of the resistors 820 (R_(G1), R_(G2), R_(G3),R_(G4)) may be in the range of 1 ohms-5 ohms. In one or more aspects,the resistance value of the resistors 820 (R_(G1), R_(G2), R_(G3),R_(G4)) may be in the range of 1 ohms-10 ohms. In one or more aspects,the resistance value of the resistors 820 (R_(G1), R_(G2), R_(G3),R_(G4)) may be in the range of 1.5 ohms-6 ohms.

FIG. 34 illustrates a top view of the effective gate switching loop anda power module according to an aspect of the disclosure. In particular,FIG. 34 illustrates that the signal substrate or signal interconnectionassembly 616 may have rails 816, 818 connecting to the gate and sourcekelvin connector terminals 502, 504 on the edge of the board of thesignal interconnection assembly 616. The rail 818 may connect to gatewire bond pads through individual gate resistors 820 (resistors R_(G1),R_(G2), . . . R_(GN)), while the rail 816 may connect through individualresistors 822 (resistors R_(S1), R_(S2), R_(S3), . . . R_(SN)) to thesource pad of the power device 302. This may be considered a true kelvinconnection, as the source kelvin bond is not in the current path of thepower source bonds. A kelvin connection may be important for clean andefficient control, reducing the influence of the high drain to sourcecurrent on the signal loop.

FIG. 34 further illustrates optional signal connections 506, 508 on thesignal interconnection assembly 616. The connections 506, 508 may beused for temperature measurement or other forms of internal sensing. Insome aspects, the internal sensing may include diagnostic sensing thatincludes diagnostic signals that may be generated from diagnosticsensors that may include strain gauges sensing vibration, sensorssensing humidity, and the like. Moreover, the diagnostic sensors maysense any environmental or device characteristic.

In one aspect, the sensor may be a temperature sensor 610 that may beplaced on the power substrate 606 or the base plate 602. In one aspect,the power substrate 606 or the base plate 602 may have a metal surfaceand/or conductive surface supporting the power devices 302. In oneaspect, a portion 850 of the surface of the power substrate 606 or thebase plate 602 may be different from the surface supporting the powerdevices 302. In one aspect, the portion 850 may be a portion having themetal surface and/or conductive surface removed, etched, nonexistent, orthe like. In one aspect, the temperature sensor 610 may be placed on thepower substrate 606 or the base plate 602 in an area where a metalsurface of the power substrate 606 or the base plate 602 has beenremoved or is nonexistent. In these aspects, the temperature sensor 610may be isolated and provide a more accurate temperature reading. Ofcourse, other locations and arrangements for the temperature sensor 610are contemplated as well.

This implementation of this signal loop or the signal interconnectionassembly 616 may ensure quality control and measurements across anycombination of paralleled power devices 302 in the switch position 104.Standard PCB board-to-board connectors may allow for a straightforwardconnection to external gate driver and control circuitry.

This gate distribution network, as shown, may be implemented with a PCB.It may also be formed as a thick film circuit directly on the primarypower substrate 630, directly on the base plate 602, or the like. Thishas the benefit of reducing the part count of the power module 100 aswell as the option to print the resistors 820, 822. In aspects, a thickfilm or deposited and patterned metal implementation may be utilized onthe housing 612, 618 itself. The resistors 820, 822 may be much smallerthan the size of the surface mount parts on a PCB, as there may be noneed for solder terminals and the resistors 820, 822 may be activelycooled from the cold plate, minimizing thermal sizing constraints of thecomponent.

FIG. 35 illustrates a perspective view of a configuration that includespower modules and a housing in accordance with an aspect of thedisclosure; FIG. 36 illustrates a side view of the configuration of FIG.35; FIG. 37 illustrates a partial perspective view of the configurationof FIG. 35; FIG. 38 illustrates another partial perspective view of theconfiguration of FIG. 35; FIG. 39 illustrates another partialperspective view of the configuration of FIG. 35; FIG. 40 illustratesanother partial perspective view of the configuration of FIG. 35; andFIG. 41 illustrates another partial perspective view of theconfiguration of FIG. 35.

In particular, FIGS. 35-40 illustrate a configuration 3500 that may beutilized to implement one or more of the power modules 100, the bussbars 900, the driver 400, a controller for the power modules 100 and thedriver 400, the capacitors 102, the sensors 980, and the like. In oneaspect, the configuration 3500 may utilize one or more of the powermodules 100, the buss bars 900, the driver 400, a controller for thepower modules 100 and the driver 400, the capacitors 102, the sensors980, and the like as described herein. In one aspect, the configuration3500 may utilize one or more other types of power modules, buss bars,drivers, a controller for the power modules and the driver, capacitors,sensors, and the like.

In one aspect, the configuration 3500 may be implemented in a widevariety of power topologies, including half-bridge, full-bridge, threephase, booster, chopper, DC-DC converters, and like arrangements and/ortopologies. In the aspect shown in FIGS. 35-40, the configuration 3500is illustrated as implementing a three-phase topology.

With particular reference to FIG. 35, the configuration 3500 may includea housing 3502. The housing 3502 may include a top portion 3504, amiddle portion 3506, and a bottom portion 3508. However, the housing3502 may be implemented in fewer or greater number of housing portions.In one aspect, the housing 3502 may be constructed of a syntheticmaterial, a plastic material, a metallic material, or the like. In oneaspect, the housing 3502 may be constructed of a plastic material. Inone aspect, the housing 3502 may be constructed of a plastic materialthat may be injection molded.

With further reference to FIG. 35, in one aspect the top portion 3504may be mechanically fastened to the configuration 3500 with mechanicalfasteners 3512. In other aspects, the top portion 3504 may be fastenedto the configuration 3500 utilizing other assemblies and/orconfigurations. In one aspect, the top portion 3504 may include coolingslots 3510 to allow air within the configuration 3500 to flowtherethrough for cooling purposes.

With further reference to FIG. 35, in one aspect, the middle portion3506 may be arranged between the top portion 3504 and the bottom portion3508. The bottom portion 3508 may be configured to receive the topportion 3504 and the middle portion 3506 to provide an enclosure of thevarious components of the configuration 3500. In one aspect, the middleportion 3506 and/or the bottom portion 3508 may be further configured toallow the phase outputs 930 to extend therethrough. In other aspectsimplementing other topologies, the middle portion 3506 and/or the bottomportion 3508 may be further configured to allow the other types ofoutputs to extend therethrough.

With further reference to FIG. 35, in one aspect the bottom portion 3508may support the middle portion 3506. In one aspect, the bottom portion3508 may include supports 3514 to support the phase outputs 930. Inanother aspect, the bottom portion 3508 may include supports 3514 tosupport other types of outputs when implementing other topologies.

In one or more aspects, the bottom portion 3508 may further include anaperture 3528 configured to allow fluid connections 3516 to a cold plate902 to extend therefrom. In one aspect, the fluid connections 3516 mayreceive a fluid source and/or deliver fluid for cooling purposes inassociation with the cold plate 902.

With reference to FIG. 36, in one aspect the configuration 3500 mayinclude the conductors 910, 912. In one aspect, the conductors 910, 912may be arranged on an opposite side of the configuration 3500 to that ofthe phase outputs 930. In one aspect, the conductors 910, 912 may bearranged on an opposite side of the configuration 3500 to that of theother types of outputs for other types of topologies.

In one aspect, the configuration 3500 may include a cooling fan 3518.The cooling fan 3518 may be configured to move air through the housing3502 of the configuration 3500 for cooling the various components of theconfiguration 3500. In one aspect, the cooling fan 3518 may bepositioned in an opening on the side of the configuration 3500 such thatthe cooling fan 3518 moves air through the opening and likewise movesair through the cooling slots 3510 illustrated in FIG. 35.

In one aspect, the configuration 3500 may include an electricalinterface 3520. In one aspect, the electrical interface 3520 may connectand exchange data with one or more of the power modules 100, the bussbars 900, the driver 400, the controller for the power modules 100 andthe driver 400, the capacitors 102, the sensors 980, and the like. Inone aspect, the data may be control signals, sensor signals, drivesignals, signals to load, remove, or modify software, and the like. Inone aspect, the electrical interface 3520 (or other connectors alongthis wall) may alternatively or additionally provide low voltage(12-24V) power for the controller and drivers 400. In a particularaspect, the configuration 3500 may be configured to be connected to apower source at the conductors 910, 912, be fully operated, controlled,and analyzed through the electrical interface 3520, and provide outputfrom the phase outputs 930.

With reference to FIG. 37, the configuration 3500 is shown with the topportion 3504 removed for ease of illustration and understanding. In oneaspect, as shown by FIG. 37, the middle portion 3506 may includeportions 3526 for receiving the mechanical fasteners 3512. FIG. 37further illustrates the controller 3522, the drivers 400, and the wiredconnections 3524 between the controller 3522 and the drivers 400.

With reference to FIG. 38, the configuration 3500 is shown with thecontroller 3522, the drivers 400, and the wired connections 3524 removedfrom the middle portion 3506 for ease of illustration and understanding.In particular, FIG. 38 illustrates a surface for supporting thecontroller 3522, the drivers 400, the wired connections 3524, and thelike.

FIG. 39 illustrates the configuration 3500 with the middle portion 3506removed for ease of illustration and understanding. In particular, FIG.39 illustrates the arrangement configuration of the buss bars 900, thepower modules 100, the cold plate 902, and the sensors 980. Inparticular, FIG. 39 illustrates the arrangement and configuration of thebuss bars 900, the power modules 100, the cold plate 902, and thesensors 980 supported by the bottom portion 3508.

FIG. 40 illustrates the configuration 3500 with the middle portion 3506and the buss bars 900 removed for ease of illustration andunderstanding. As shown in FIG. 40, the arrangement of the power modules100, the cold plate 902, and the sensors 980 is shown for theconfiguration 3500. In particular, FIG. 40 illustrates components 3530for securing attachment of input and output connections to the phaseoutputs 930 and the conductors 910. In one aspect, the components 3530for securing attachment may be a mechanical fastener. In one aspect, themechanical fastener may be a female threaded component configured toreceive the corresponding threaded male component. In one aspect,mechanical fastener may be a hex nut.

FIG. 41 illustrates the configuration 3500 with the middle portion 3506,the buss bars 900, the power modules 100, the cold plate 902, and thesensors 980 removed for ease of illustration and understanding. As shownin FIG. 41, the bottom portion 3508 of the configuration 3500 mayinclude structures 3540 for connecting to the middle portion 3506. Asshown in FIG. 41, the bottom portion 3508 of the configuration 3500 mayinclude structures 3542 for holding at least the power modules 100 andthe cold plate 902. As shown in FIG. 41, the bottom portion 3508 of theconfiguration 3500 may include structures 3544 for at least holding thecapacitors 102. In some aspects, the structures may be ribs,reinforcement portions, mechanical fastener receiving portions, and thelike.

In one aspect, the configuration 3500 may be implemented as anevaluation system, an evaluation kit, a test system, or the like. Thisimplementation being defined broadly as an evaluation kit for brevity.In a particular aspect, the evaluation kit implementation of theconfiguration 3500 may be configured to be connected to a power sourceat the conductors 910, 912, be fully operated, controlled, and analyzedthrough the electrical interface 3520, and provide output from the phaseoutputs 930. In this regard, a user may implement the evaluation kitimplementation of the configuration 3500 in order to perform tests,mockups, and the like prior to implementing and manufacturing a systemimplementing the power module 100 of the disclosure. In one aspect, auser may implement the evaluation kit implementation of theconfiguration 3500 in order to perform tests, mockups, and the like withrespect to a particular application of the power module 100. In oneaspect, the application may be a power system, a motor system, anautomotive motor system, a charging system, an automotive chargingsystem, a vehicle system, an industrial motor drive, an embedded motordrive, an uninterruptible power supply, an AC-DC power supply, a welderpower supply, military systems, an inverter for renewable energies suchas wind turbines, solar power panels, tidal power plants, and electricvehicles (EVs), and the like.

FIG. 42 illustrates a process of implementing and operating aconfiguration that includes a power module. In particular, FIG. 42illustrates a process 4200 of implementing and operating aconfiguration. In one aspect, the process 4200 may be implementedutilizing the configuration 3500 disclosed herein.

The process 4200 may further include assembling a power module 100 andassociated components in a housing 3502 to form a configuration 3500 asillustrated in box 4202. In one aspect, the configuration 3500 may beassembled to include one or more of the power modules 100, the buss bars900, the driver 400, a controller for the power modules 100 and thedriver 400, the capacitors 102, the sensors 980, and the like. In oneaspect, the configuration 3500 may be assembled with one or more of thepower modules 100, the buss bars 900, the driver 400, a controller forthe power modules 100 and the driver 400, the capacitors 102, thesensors 980, and the like as described herein. In one aspect, theconfiguration 3500 may be assembled to include one or more other typesof power modules, buss bars, drivers, a controller for the power modulesand the driver, capacitors, sensors, and the like.

The process 4200 may further include connecting the configuration to apower source 4204. In one aspect, the conductors 910, 912 of theconfiguration 3500 may be connected to a power source. In one aspect,the conductors 910, 912 of the configuration 3500 may be connected to aDC power source.

The process 4200 may further include operating 4206 the configuration3500. In one aspect, the configuration 3500 may be operated such thatone or more of the power modules 100, the buss bars 900, the driver 400,a controller for the power modules 100 and the driver 400, thecapacitors 102, the sensors 980, and the like provide output. In oneaspect, the configuration 3500 may be programmed to implement the aspectof operating 4206 the configuration 3500. In one aspect, the controllerof the configuration 3500 may be programmed to implement the aspect ofoperating the configuration 3500. In one aspect, the driver 400 of theconfiguration 3500 may be programmed to implement the aspect ofoperating the configuration.

The process 4200 may further include measuring various operatingparameters 4208 of the configuration 3500 including the power module 100and associated components. In one aspect, the configuration 3500 may beoperated such that the various internal sensors output sensor data. Inone aspect, the configuration 3500 may be operated and connected toexternal sensors that output sensor data such as oscilloscopes, computersystems, and the like. In one aspect, the various sensor data may becollected by a computer system. The computer system may include aprocessor, memory, operating system, and the like. In one or moreaspects, the output sensor data may be based on and/or include switchinglosses, temperatures, inductances, switching speed, overshoot, waveformanalysis, and the like related to the power module 100 or othercomponents implemented by the configuration 3500. In one aspect,measuring various operating parameters 4208 of the configuration 3500may be with respect to a particular application of the power module 100.In one aspect, the application may be a power system, a motor system, anautomotive motor system, a charging system, an automotive chargingsystem, a vehicle system, an industrial motor drive, an embedded motordrive, an uninterruptible power supply, an AC-DC power supply, a welderpower supply, military systems, an inverter for renewable energies suchas wind turbines, solar power panels, tidal power plants, and electricvehicles (EVs), and the like.

The process 4200 may further include outputting 4210 the operatingparameters to a man machine interface. In one aspect, the operatingparameters may be analyzed by the computer system. In one aspect, thecomputer system may analyze the operating parameters including thesensor data to generate an output. In one aspect, the output may beprovided to a man machine interface. In one aspect, the man machineinterface may include one or more of a display, a print out, an analysisfile, and the like.

The process 4200 may further include modifying aspects of theconfiguration 4212 and repeating the process 4200. In one aspect, theconfiguration 3500 may be modified to include additional componentsconsistent with the disclosure. In one aspect, the configuration 3500may be modified to include fewer components consistent with thedisclosure. In one aspect, the controller program of the configuration3500 may be modified. In one aspect, the driver 400 program of theconfiguration 3500 may be modified. In one aspect, operating voltages orcurrents for the configuration 3500 may be modified.

In one or more aspects, the power module 100 of the disclosure may beconfigured to operate with various performance characteristics. However,the performance characteristics may not necessarily be limited to theparticular implementations and aspects set forth in the disclosure. Thevarious performance characteristics are described below as well asexemplary details of an exemplary construction and implementation thatmay provide in part the performance characteristics. However, thevarious performance characteristics should not be limited to theparticular disclosed aspects of the power module 100. In certainaspects, the various performance characteristics and exemplaryconstruction implementations may be associated with lower voltageimplementations. In one aspect, lower voltage implementations may bedefined to include implementations operating less than 3.4 Kv. In oneaspect, lower voltage implementations may be defined to includeimplementations operating less than 3.3 Kv. In one aspect, lower voltageimplementations may be defined to include implementations operating lessthan 3.0 Kv. In one aspect, the lower voltage implementations includeimplementations operating in a range of 100 v-3400 v, 100 v-3300 v, 100v-3000 v, 100 v-2500 v, 100 v-2000 v, and 100 v-1700 v. In one aspect,higher voltage implementations may be defined to include implementationsoperating greater than 3.4 Kv. In one aspect, higher voltageimplementations may be defined to include implementations operatinggreater than 3.3 Kv. In one aspect, higher voltage implementations maybe defined to include implementations operating greater than 3.0 Kv. Inone aspect, the higher voltage implementations include implementationsoperating in a range of 3400 v-5000 v, 3300 v-5000 v, 3000 v-5000 v,3400 v-10000 v, 3300 v-10000 v, 3000 v-10000 v. In this regard, aspectsof the disclosure implementing lower voltage implementations as definedherein may be distinguished from higher voltage implementations asdefined herein. For example, in some aspects lower voltageimplementations may be distinguished from higher voltage implementationsbased on one or more of the following: a spacing between conductorsand/or terminals of the power module 100, configurations of power loopswithin the power module 100, a fundamental layout of the power module100, a current carrying capacity and/or current carrying capabilities ofthe power module 100, a substrate thickness of the power module 100, aterminal layout of the power module 100, thermal performance of thepower module 100, configurations for addressing creepage issues of thepower module 100, configurations for addressing clearance issues of thepower module 100, insulation configurations of the power module 100, busbar configurations of the power module 100, and/or the like. In thisregard, at least one or more of the above noted aspects may distinguishthe low-voltage implementation from the high-voltage implementation.

In one or more aspects, the power module 100 of the disclosure may beconfigured to operate with the following parasitic stray inductance. Inone aspect, a total stray inductance value of the critical power switchin loop 114 illustrated in FIG. 1B of the power module 100 may be lessthan 12 (nH). In one aspect, a total stray inductance value of thecritical power switch in loop 114 illustrated in FIG. 1B of the powermodule 100 may be less than 11 (nH). In one aspect, a total strayinductance value of the critical power switch in loop 114 illustrated inFIG. 1B of the power module 100 may be less than 7 (nH). In one aspect,a total stray inductance value of the critical power switch in loop 114illustrated in FIG. 1B of the power module 100 may be less than 4 (nH).In one aspect, a total stray inductance value of the critical powerswitch in loop 114 illustrated in FIG. 1B of the power module 100 may beless than 3 (nH).

In one aspect, a total stray inductance value of the critical powerswitch in loop 114 illustrated in FIG. 1B of the power module 100 mayhave a range of 12 (nH) to 2 (nH), 10 (nH) to 2 (nH), and 4 (nH) to 2(nH).

In one aspect, a total stray inductance value of the critical powerswitch in loop 114 illustrated in FIG. 1B of the power module 100 may beless than 4 (nH) for a power module 100 having particular loop lengthsand/or cross-sectional areas. In one aspect, a total stray inductancevalue of the critical power switch in loop 114 illustrated in FIG. 1B ofthe power module 100 may be less than 8 (nH) for a power module 100having particular loop lengths and/or cross-sectional areas. In oneaspect, a total stray inductance value of the critical power switch inloop 114 illustrated in FIG. 1B of the power module 100 may be less than12 (nH) for a power module 100 having particular loop lengths and/orcross-sectional areas. In one aspect, a total stray inductance value ofthe critical power switch in loop 114 illustrated in FIG. 1B of thepower module 100 may have a range of 4 (nH) to 2 (nH) for a power module100 having particular loop lengths and/or cross-sectional areas. In oneaspect, a total stray inductance value of the critical power switch inloop 114 illustrated in FIG. 1B of the power module 100 may have a rangeof 8 (nH) to 4 (nH) for a power module 100 having particular looplengths and/or cross-sectional areas. In one aspect, a total strayinductance value of the critical power switch in loop 114 illustrated inFIG. 1B of the power module 100 may have a range of 12 (nH) to 8 (nH)for a power module 100 having particular loop lengths and/orcross-sectional areas.

In one or more aspects, the power module 100 of the disclosure may beconfigured to operate with the following switching speed.

In one aspect, the switching speed of the power module 100 may be lessthan 100 (A/ns) di/dt. In one aspect, the switching speed of the powermodule 100 may be less than 90 (A/ns) di/dt. In one aspect, theswitching speed of the power module 100 may be less than 80 (A/ns)di/dt. In one aspect, the switching speed of the power module 100 may beless than 50 (A/ns) di/dt. In one aspect, the switching speed of thepower module 100 may be less than 35 (A/ns) di/dt.

In one aspect, the switching speed of the power module 100 may have arange of 30 to 100 (A/ns) di/dt. In one aspect, the switching speed ofthe power module 100 may have a range of 30 to 70 (A/ns) di/dt. In oneaspect, the switching speed of the power module 100 may have a range of40 to 90 (A/ns) di/dt. In one aspect, the switching speed of the powermodule 100 may have a range of 30 to 40 (A/ns) di/dt.

In one aspect, the switching speed of the power module 100 may be lessthan 120 (V/ns) dv/dt. In one aspect, the switching speed of the powermodule 100 may be less than 100 (V/ns) dv/dt. In one aspect, theswitching speed of the power module 100 may have a range of 20 (V/ns)dv/dt to 100 (V/ns) dv/dt. In one aspect, the switching speed of thepower module 100 may have a range of 40 (V/ns) dv/dt to 100 (V/ns)dv/dt. In one aspect, the switching speed of the power module 100 mayhave a range of 60 (V/ns) dv/dt to 100 (V/ns) dv/dt. In one aspect, theswitching speed of the power module 100 may have a range of 80 (V/ns)dv/dt to 100 (V/ns) dv/dt. In one aspect, the switching speed of thepower module 100 may have a range of 60 (V/ns) dv/dt to 80 (V/ns) dv/dt.In one aspect, the switching speed of the power module 100 may have arange of 40 (V/ns) dv/dt to 60 (V/ns) dv/dt. In one aspect, theswitching speed of the power module 100 may have a range of 20 (V/ns)dv/dt to 40 (V/ns) dv/dt. In one aspect, the switching speed of thepower module 100 may have a range of 60 (V/ns) to 80 (V/ns), 40 (V/ns)to 60 (V/ns), 20 (V/ns) to 40 (V/ns).

In one or more aspects, the power module 100 of the disclosure may beconfigured to operate with the following switching losses.

In one aspect, the switching losses of the power module 100 may be lessthan 0.05 (mJ/A) milli-joules per amp. In one aspect, the switchinglosses of the power module 100 may be less than 0.04 (mJ/A) milli-joulesper amp. In one aspect, the switching losses of the power module 100 maybe less than 0.025 (mJ/A) milli-joules per amp. In one aspect, theswitching losses of the power module 100 may have a range of 0.05 (mJ/A)milli-joules per amp to 0.025 (mJ/A) milli-joules per amp. In oneaspect, the switching losses of the power module 100 may have a range of0.025 (mJ/A) milli-joules per amp to 0.04 (mJ/A) milli-joules per amp.

In aspects of the disclosure, the power module 100 width and length maybe scalable such that the power module 100 may be configured wider (morepower devices 302, less inductance) or smaller (smaller size, lowercost). The following table shows a various range implementations,including a minimum practical width and maximum expected size (roughly asquare footprint). The power device utilization may be defined as apercentage calculated by a ratio of the power device area to the totalpower module area. In one aspect, the area utilized in this disclosureis calculated by multiplying width times length. In this regard, thewidth may be defined along an axis extending across the power module 100as illustrated in FIG. 11; and the length may be defined along an axisperpendicular to the width as illustrated in FIG. 11. The table belowprovides a particular set of non-limiting specifications.

# of Devices Device (Per Width Length Height Area Volume UtilizationPosition) (mm) (mm) (mm) (cm²) (cm³) (%) Aspect 1 3 42.0 74.0 15.75 31.149.0 6.1 Aspect 2 5 53.0 80.0 15.75 42.4 66.8 7.5 Aspect 3 10 80.5 80.015.75 64.4 101.4 9.8

In one aspect of the disclosure, the power module 100 may have a powerdevice utilization area in the range of 7-10%. In one aspect of thedisclosure, the power module 100 may have a power device utilizationarea in the range of 6-8%. In one aspect of the disclosure, the powermodule 100 may have a power device utilization area in the range of5-7%.

In various aspects, the power module 100 height may also scalable. Inthis case, the power module 100 may be configured to be as thin aspossible to minimize inductance. The height may be set based on (A) thecreepage and clearance specifications required for 1700V operation, (B)the height of the wire bonds, and (C) the type of encapsulation materialused. For a lower range voltage module (650V), some design changes maybe made to reduce the height. Conversely, the power module 100 may bemade taller for higher range voltage devices. In various aspects, theheight as utilized in this disclosure is defined as being perpendicularto the width and the length. With reference to FIG. 4A, an exemplaryheight of the power module 100 is illustrated. The height of the powermodule may be in the range of 7 mm to 30 mm, 9 mm to 11 mm, 11 mm to 13mm, 13 mm to 15 mm, 15 mm to 17 mm, 17 mm to 19 mm, 19 mm to 21 mm, 21mm to 23 mm, and 23 mm to 27 mm. The table below provides a particularset of non-limiting specifications.

Max. Voltage Height (V) (mm) Aspect 1 650 10.00 Aspect 2 1700 15.75Aspect 3 3300 25.00

Power Contact Parameters

The power contacts or terminals 106, 108, 110 may be configured andconstructed to be wide and to fill the maximum percentage of the powermodule 100 with as possible given practical voltage creepage/clearancelimitations. The width ratio compares the width of the contact orterminals 106, 108, 110 relative to the power module 100 width. In oneaspect, the power module 100 width may be a width of the base plate 602.In one aspect, the power module 100 width may be a width of the one ormore substrates 606. In one aspect, the power module 100 width may be awidth between the housing sidewalls 612. In one aspect, the power module100 width may be a width of the housing lid 618. The length ratio takesthe contact length of all three contacts or terminals 106, 108, 110 andcompares it to the total power module 100 length. In one aspect, thepower module 100 length may be a length of the base plate 602. In oneaspect, the power module 100 length may be a length of the one or moresubstrates 606. In one aspect, the power module 100 length may be alength between the housing sidewalls 612. In one aspect, the powermodule 100 length may be a length of the housing lid 618. The area ratiocompares the total contact area to the total power module 100 area. Inone aspect, the power module 100 area may be an area of the base plate602. In one aspect, the power module 100 area may be an area of the oneor more substrates 606. In one aspect, the power module 100 area may bean area between the housing sidewalls 612. In one aspect, the powermodule 100 area may be an area of the housing lid 618. The base ratiocompares the total contact base width to the power module 100 width.This assumes a solder fillet around the perimeter of the base. In oneaspect, the power module 100 width may be a width of the base plate 602.In one aspect, the power module 100 width may be a width of the one ormore substrates 606. In one aspect, the power module 100 width may be awidth between the housing sidewalls 612. In one aspect, the power module100 width may be a width of the housing lid 618. The table belowprovides a particular set of non-limiting specifications.

# of Devices Tab Tab Tab Section Width Length Area Base (Per WidthLength Thickness Area Area Ratio Ratio Ratio Ratio Position) (mm) (mm)(mm) (mm²) (mm²) (%) (%) (%) (%) Aspect 1 3 18.5 12.5 1 231.3 18.5 44.050.7 22.3 75.7 Aspect 2 5 29.5 12.5 1 368.8 29.5 55.7 46.9 26.1 84.7Aspect 3 10 57.0 12.5 1 712.5 57.0 70.8 46.9 33.2 92.1

In one aspect, the power module 100 may have a terminal area ratio ofgreater than 20%. In one aspect, the power module 100 may have aterminal area ratio of greater than 25%. In one aspect, the power module100 may have a terminal area ratio of greater than 30%. In one aspect,the power module 100 may have a terminal area ratio in a range of 20% to25%. In one aspect, the power module 100 may have a terminal area ratioin a range of 25% to 30%. In one aspect, the power module 100 may have aterminal area ratio in a range of 30% to 35%.

In one aspect, the power module 100 may have a base ratio in a range of70% to 80%. In one aspect, the power module 100 may have a base ratio ina range of 80% to 90%. In one aspect, the power module 100 may have abase ratio in a range of 90% to 95%.

In various aspects, the base 636 may be configured to ‘feather’ or‘digitate’ the feet of the contact. In some aspects, the split feet ofthe base 636 may provide more room for solder to fillet around the sidesof the connector, adding strength in multiple directions and axes. Thesplit base 636 may break up the stress and may improve reliability.

The vertical offset 702 of the V+ and V− power contacts may be used tominimize the total loop inductance of a system by reducing a need forbends or offsets in the external bus bar 900. In some aspects, thereduced bus bar 900 complexity may also reduce cost. In one aspect, thevertical offset 702 may be 3.25 mm (3 mm for the metal thickness and0.25 mm for the laminated isolation). In other aspects, the verticaloffset 702 may have the following practical ranges 2 mm-3 mm, 3 mm-4 mm,4 mm-5 mm, and 5 mm-6 mm. The table below provides a particular set ofnon-limiting specifications.

Bus Bar Thickness Isolation Thickness (mm) (mm) 2 0.125 3 0.25 4 0.375 50.5

Substrate Parameters

The power substrate 100 may also be configured to be wide and as full ofpower devices 302 as possible. Aspects of the disclosure include a highdevice area/substrate area utilization. The power device 302 spacing maybe determined by heat spreading, thermal performance, processing designrules for optimal manufacturability, and the like. The power deviceratio compares the active device area in comparison to the total powersubstrate 606 width. In this regard, the width may be defined along anaxis extending through a plurality of power devices 302 as illustratedin FIG. 11. A portion of the power substrate 606 width may be used forthe overcurrent and temperature sensor 610. In some aspects, the powerdevice ratio percentage number may be increased without those features.In one aspect, the power module 100 may have an active device area ofgreater than 60%. In one aspect, the power module 100 may have an activedevice area of greater than 65%. In one aspect, the power module 100 mayhave an active device area of greater than 70%. In one aspect, the powermodule 100 may have an active device area of 60% to 65%. In one aspect,the power module 100 may have an active device area of 65% to 70%. Inone aspect, the power module 100 may have an active device area of 70%to 75%. The table below provides a particular set of non-limitingspecifications.

# of Devices Trace Trace Section Device (Per Width Length Thickness AreaRatio Position) (mm) (mm) (mm) (mm²) (%) Aspect 1 3 20.5 16.5 0.2 4.1063.8 Aspect 2 5 31.5 22.5 0.2 6.30 69.2 Aspect 3 10 59.0 22.5 0.2 11.8073.9

In some aspects, the power substrate 606 metal thickness may beconfigured as follows. In various aspects, the thickness of the metalmaybe a tradeoff with thermal performance, package resistance, cost, andthe like. In one aspect, the power substrate 606 metal thickness may beless than 0.5 mm. In one aspect, the power substrate 606 metal thicknessmay be less than 0.3 mm. In one aspect, the power substrate 606 metalthickness may be 0.2 mm. In one aspect, the power substrate 606 metalthickness may be in the range of 0.1 mm to 0.6 mm, 0.2 mm to 0.3 mm, 0.3mm to 0.4 mm, 0.4 mm to 0.5 mm, and 0.5 mm to 0.6 mm.

Wire Bond Parameters

The power wire bonds 628 may be any of the diameters listed in the tablebelow. In one aspect, 12 mil (0.30 mm) diameter aluminum bonds may beutilized. In one aspect, a diameter of the bond bonds may be 0.15 mm to0.25 mm, 0.2 mm to 0.3 mm, 0.25 mm to 0.35 mm, 0.35 mm to 0.45 mm, and0.45 mm to 0.55 mm. In other aspects, larger diameter aluminum bonds aswell as large diameter copper bonds may be utilized. In further aspects,soldered copper tabs may be utilized for the maximum current capability.In one aspect, a diameter of the power wire bonds 628 may be in therange 0.15 mm to 0.6 mm. In one aspect, a diameter of the power wirebonds 628 may be in the range 0.19 mm to 0.52 mm. In one aspect, adiameter of the power wire bonds 628 may be in the range 0.2 mm to 0.51mm. The table below provides a particular set of non-limitingspecifications.

Diameter (mil) (mm) 8 0.20 10 0.25 12 0.30 15 0.38 20 0.51

In one aspect, the power wire bonds 628 may include aluminum wire bonds,aluminum ribbon bonds, copper wire bonds, copper ribbon bonds, coppersoldered, copper sintered tabs, and the like as illustrated in the tablebelow.

Material Aluminum Wire Aluminum Ribbon Copper Wire Copper Ribbon CopperSoldered/Sintered Tab

In particular aspects, the wire bond 628 may be configured to have loopgeometry as listed in the table below. In various aspects, the loopgeometry may be configured to be as low profile and as short as possibleto minimize resistance. The bond length is determined by the placementof the die of the power device 302 and the power module 100configuration. In one aspect, the wire bond length may have a range 4 mmto 12 mm. In one aspect, the wire bond length may have a range 5 mm to11 mm. In one aspect, the wire bond loop height may have a range 0.5 mmto 3 mm. In one aspect, the wire bond loop height may have a range 1 mmto 2.5 mm. The table below provides a particular set of non-limitingspecifications.

Bond Length Loop Height (mm) (mm) Aspect 1 5.5 1.2 Aspect 2 10.0 2.0

In one aspect, the configuration may utilize an increased or maximumnumber of bonds 628 per power device 302. The number of bonds 628 maydepend on the size of the die, the pad area, and the bond diameter. Thetable below provides a particular set of non-limiting specifications. Inparticular, the values listed below are for differing sizeimplementations of MOSFETs.

Bonds Per power Device (#) Aspect 1 4 Aspect 2 10

In one aspect, each power device 302 may be implemented to have 3 to 12bonds 628. In one aspect, each power device 302 may be implemented tohave 4 to 10 bonds 628. In one aspect, each power device 302 may beimplemented to have more than 4 bonds 628. In one aspect, each powerdevice 302 may be implemented to have more than 6 bonds 628. In oneaspect, each power device 302 may be implemented to have more than 8bonds 628. In one aspect, each power device 302 may be implemented tohave more than 10 bonds 628.

Inductance & Switching Parameters

The inductance of the power module 100 may be determined by the totalloop length, cross sectional area, flux cancelation, and the like. Invarious aspects, the power module 100 may be configured to minimize theinductance by configuring the power module 100 to have a low profile,using wide power contacts, and achieving some flux cancelation in thepower module 100 as the loop folds back over itself. The width of thepower module 100 may have a large influence on the inductance as well.

The table below is based on a particular implementation of the powermodule 100 and provides inductance and other simulation results todetermine the inductance of the other configurations. The lowestinductance configuration assumes that the power module 100 may beconfigured thinner as well (i.e. the 650V thickness listed previously).The dV/dt maximum is not a limitation for the power module 100.

The di/dt value was calculated to be a theoretical maximum assuming a1200V device and an 800V bus. This may result in a maximum of 400V ofpossible overshoot. In this regard, the calculations have assumed a 2 nHbus loop inductance, which is added in series with the power module 100.Assuming this, in one aspect the fastest the power module 100 may switchis listed in the table below.

In one or more aspects, loss has been determined from testing aparticular implementation using very aggressive switching. In oneaspect, the loss may have a range 0.025 to 0.050 mJ/A, 0.025 to 0.040mJ/A, and 0.025 to 0.035 mJ/A. The table below provides a particular setof non-limiting specifications.

dV/dt di/dt # of Devices Inductance max max Loss (Per Position) (nH)(V/ns) (A/ns) (mJ/A) Aspect 1 3 10.0 <100* 33.33 Aspect 2 5 6.7 <100*45.98 0.03 Aspect 3 10 3.2 <100* 76.92 Aspect 4 10 2.5 <100* 88.89

In aspect 1, a total stray inductance value of the power module 100 mayhave a range of 9 (nH) to 11 (nH). In aspect 2, a total stray inductancevalue of the power module 100 may have a range of 6 (nH) to 7 (nH). Inaspect 3, a total stray inductance value of the power module 100 mayhave a range of 3 (nH) to 4 (nH). In aspect 4, a total stray inductancevalue of the power module 100 may have a range of 2 (nH) to 3 (nH).

The power module of the disclosure is adaptable for most systems withinthe power processing needs and size and weight restrictions specific fora given application. The power module design and system level structuresdescribed in the disclosure allow for a high level of power density andvolumetric utilization to be achieved.

Accordingly, the disclosure has set forth an improved power module 100and associated system configured to address parasitic impedances, suchas loop inductance, to increase stability, decrease switching losses,reduce EMI, and limit stresses on system components. In particular, thedisclosed power module has the ability with the disclosed arrangement toreduce inductance in some aspects by as much as 10%. Moreover, thedisclosed power module 100 may be implemented in numerous typologiesincluding a half-bridge configuration, a full-bridge configuration, acommon source configuration, a common drain configuration, a neutralpoint clamp configuration, and a three phase configuration. Applicationsof the power module 100 include motor drives, solar inverters, circuitbreakers, protection circuits, DC-DC converters, and the like.

Aspects of the disclosure have been described above with reference tothe accompanying drawings, in which aspects of the disclosure are shown.It will be appreciated, however, that this disclosure may, however, beembodied in many different forms and should not be construed as limitedto the aspects set forth above. Rather, these aspects are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope of the disclosure to those skilled in the art.Additionally, the various aspects described may be implementedseparately. Moreover, one or more the various aspects described may becombined. Like numbers refer to like elements throughout.

It will be understood that, although the terms first, second, etc. areused throughout this specification to describe various elements, theseelements should not be limited by these terms. These terms are only usedto distinguish one element from another. For example, a first elementcould be termed a second element, and, similarly, a second element couldbe termed a first element, without departing from the scope of thedisclosure. The term “and/or” includes any and all combinations of oneor more of the associated listed items.

The terminology used herein is for the purpose of describing particularaspects only and is not intended to be limiting of the disclosure. Asused herein, the singular forms “a,” “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”“comprising,” “includes” and/or “including” when used herein, specifythe presence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

It will be understood that when an element such as a layer, region orsubstrate is referred to as being “on” or extending “onto” anotherelement, it can be directly on or extend directly onto the other elementor intervening elements may also be present. In contrast, when anelement is referred to as being “directly on” or extending “directlyonto” another element, there are no intervening elements present. Itwill also be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present.

Relative terms such as “below” or “above” or “upper” or “lower” or “top”or “bottom” may be used herein to describe a relationship of oneelement, layer or region to another element, layer or region asillustrated in the figures. It will be understood that these terms areintended to encompass different orientations of the device in additionto the orientation depicted in the figures.

Aspects of the disclosure are described herein with reference tocross-section illustrations that are schematic illustrations ofidealized embodiments (and intermediate structures) of the disclosure.The thickness of layers and regions in the drawings may be exaggeratedfor clarity. Additionally, variations from the shapes of theillustrations as a result, for example, of manufacturing techniquesand/or tolerances, are to be expected.

In the drawings and specification, there have been disclosed typicalaspects of the disclosure and, although specific terms are employed,they are used in a generic and descriptive sense only and not forpurposes of limitation, the scope of the disclosure being set forth inthe following claims.

Aspects of the disclosure may be implemented in any type of computingdevices, such as, e.g., a desktop computer, personal computer, alaptop/mobile computer, a personal data assistant (PDA), a mobile phone,a tablet computer, cloud computing device, and the like, withwired/wireless communications capabilities via the communicationchannels.

Further in accordance with various aspects of the disclosure, themethods described herein are intended for operation with dedicatedhardware implementations including, but not limited to, PCs, PDAs,semiconductors, application specific integrated circuits (ASIC),programmable logic arrays, cloud computing devices, and other hardwaredevices constructed to implement the methods described herein.

It should also be noted that the software implementations of thedisclosure as described herein are optionally stored on a tangiblestorage medium, such as: a magnetic medium such as a disk or tape; amagneto-optical or optical medium such as a disk; or a solid statemedium such as a memory card or other package that houses one or moreread-only (non-volatile) memories, random access memories, or otherre-writable (volatile) memories. A digital file attachment to email orother self-contained information archive or set of archives isconsidered a distribution medium equivalent to a tangible storagemedium. Accordingly, the disclosure is considered to include a tangiblestorage medium or distribution medium, as listed herein and includingart-recognized equivalents and successor media, in which the softwareimplementations herein are stored.

Additionally, the various aspects of the disclosure may be implementedin a non-generic computer implementation. Moreover, the various aspectsof the disclosure set forth herein improve the functioning of the systemas is apparent from the disclosure hereof. Furthermore, the variousaspects of the disclosure involve computer hardware that it specificallyprogrammed to solve the complex problem addressed by the disclosure.Accordingly, the various aspects of the disclosure improve thefunctioning of the system overall in its specific implementation toperform the process set forth by the disclosure and as defined by theclaims.

While the disclosure has been described in terms of exemplary aspects,those skilled in the art will recognize that the disclosure can bepracticed with modifications in the spirit and scope of the appendedclaims. These examples given above are merely illustrative and are notmeant to be an exhaustive list of all possible designs, aspects,applications or modifications of the disclosure. In this regard, thevarious aspects, features, components, elements, modules, arrangements,circuits, and the like are contemplated to be interchangeable, mixed,matched, combined, and the like. In this regard, the different featuresof the disclosure are modular and can be mixed and matched with eachother.

What is claimed is:
 1. A power module, comprising: at least one powersubstrate; a housing arranged on the at least one power substrate; afirst terminal electrically connected to the at least one powersubstrate; a second terminal; a third terminal electrically connected tothe at least one power substrate; a plurality of power deviceselectrically connected to the at least one power substrate; agate-source board electrically connected to the plurality of powerdevices; and a temperature sensor arranged within the housing andelectrically connected to the gate-source board.
 2. The power module ofclaim 1, wherein the at least one power substrate comprises a metallicsurface and/or a conductive surface supporting the plurality of powerdevices; wherein the at least one power substrate comprises a portionthat does not include the metallic surface and/or the conductivesurface; and wherein the temperature sensor is on the portion of the atleast one power substrate that does not include the metallic surfaceand/or the conductive surface.
 3. The power module of claim 1, whereinthe gate-source board further comprises a plurality of resistors, eachone of the plurality of resistors being electrically connected to one ofthe plurality of power devices; and wherein the gate-source board isconfigured to receive at least one electrical signal.
 4. The powermodule of claim 3, wherein each one of the plurality of resistors iselectrically connected to a gate of one of the plurality of powerdevices.
 5. The power module of claim 3, wherein each one of theplurality of resistors is electrically connected to a source of one ofthe plurality of power devices.
 6. The power module of claim 3, whereinthe at least one electrical signal comprises a gate driver signal. 7.The power module of claim 3, wherein the at least one electrical signalcomprises a source Kelvin signal.
 8. The power module of claim 1,wherein the first terminal comprises a contact surface located above thehousing at a first elevation; and wherein the second terminal comprisesa contact surface located above the housing at a second elevationdifferent from the first elevation.
 9. A configuration comprising thepower module of claim 1, the configuration further comprising: at leastone component comprising at least one of the following: at least onebuss bar, a driver, a controller, at least one capacitor, a cold plate,and at least one sensor; and a configuration housing configured to houseand enclose the power module and the at least one component.
 10. Theconfiguration of claim 9, further comprising an electrical interfaceconfigured to be connected to and exchange data with at least one of thefollowing: the at least one buss bar, the driver, the controller, the atleast one capacitor, the cold plate, and the at least one sensor. 11.The configuration of claim 9, wherein the configuration is configured totest an implementation of the power module for a particular application.12. The configuration of claim 9, further comprising a cooling fanconfigured to move air through the configuration housing.
 13. The powermodule of claim 1, wherein a total stray inductance value of a criticalpower switching loop of the power module comprises a range of 12 (nH) to2 (nH).
 14. A power module, comprising: at least one power substrate; ahousing arranged on the at least one power substrate; a first terminalelectrically connected to the at least one power substrate; a secondterminal; a third terminal electrically connected to the at least onepower substrate; a plurality of power devices electrically connected tothe at least one power substrate; a gate-source board configured toreceive at least one electrical signal; and the gate-source boardfurther comprising a plurality of resistors, each one of the pluralityof resistors being electrically connected to one of the plurality ofpower devices.
 15. The power module of claim 14, wherein each one of theplurality of resistors is electrically connected to a gate of one of theplurality of power devices.
 16. The power module of claim 14, whereineach one of the plurality of resistors is electrically connected to asource of one of the plurality of power devices.
 17. The power module ofclaim 14, wherein the at least one electrical signal comprises a gatedriver signal.
 18. The power module of claim 14, wherein the at leastone electrical signal comprises a source Kelvin signal.
 19. The powermodule of claim 14, further comprising a temperature sensor arrangedwithin the housing and electrically connected to the gate-source board.20. The power module of claim 19, wherein the at least one powersubstrate comprises a metallic surface and/or a conductive surfacesupporting the plurality of power devices; wherein the at least onepower substrate comprises a portion that does not include the metallicsurface and/or the conductive surface; and wherein the temperaturesensor is on the portion of the at least one power substrate that doesnot include the metallic surface and/or the conductive surface.
 21. Thepower module of claim 14, wherein the first terminal comprises a contactsurface located above the housing at a first elevation; and wherein thesecond terminal comprises a contact surface located above the housing ata second elevation different from the first elevation.
 22. Aconfiguration comprising the power module of claim 14, the configurationfurther comprising: at least one component comprising at least one ofthe following: at least one buss bar, a driver, a controller, at leastone capacitor, a cold plate, and at least one sensor; and aconfiguration housing configured to house and enclose the power moduleand the at least one component.
 23. The configuration of claim 22,further comprising an electrical interface configured to be connected toand exchange data with at least one of the following: the at least onebuss bar, the driver, the controller, the at least one capacitor, thecold plate, and the at least one sensor.
 24. The configuration of claim22, wherein the configuration is configured to test an implementation ofthe power module for a particular application.
 25. The configuration ofclaim 22, further comprising a cooling fan configured to move airthrough the configuration housing.
 26. The power module of claim 14,wherein a total stray inductance value of a critical power switchingloop of the power module comprises a range of 12 (nH) to 2 (nH).
 27. Apower module, comprising: at least one power substrate; a housingarranged on the at least one power substrate; a first terminalelectrically connected to the at least one power substrate; a secondterminal; a third terminal electrically connected to the at least onepower substrate; and a plurality of power devices electrically connectedto the at least one power substrate, wherein the power module isstructured, arranged, and configured to reduce inductance, and whereinthe inductance comprises a total stray inductance value of a criticalpower switching loop of the power module that comprises a range of 12(nH) to 2 (nH).